发明授权
US6124626A Capacitor structures formed using excess oxygen containing material
provided relative to electrodes thereof
有权
使用相对于其电极提供的含过量含氧材料形成的电容器结构
- 专利标题： Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof
- 专利标题（中）： 使用相对于其电极提供的含过量含氧材料形成的电容器结构
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申请号： US383052申请日： 1999-08-25
-
公开(公告)号： US6124626A公开(公告)日： 2000-09-26
- 发明人: Gurtej S. Sandhu , Garo Derderian
- 申请人： Gurtej S. Sandhu , Garo Derderian
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/20 ; H01L21/31 ; H01L21/425 ; H01L21/469 ; H01L21/8242 ; H01L23/58
摘要：
Formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.
公开/授权文献
- US4938622A Coupling device 公开/授权日：1990-07-03
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