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    Structures formed using excess oxygen containing material
    1.
    发明授权
    Structures formed using excess oxygen containing material 失效
    使用过量含氧材料形成的结构

    公开(公告)号：US06376327B2

    公开(公告)日：2002-04-23

    申请号：US09754666

    申请日：2001-01-04

    申请人： Gurtej S. Sandhu ,  Garo Derderian

    发明人： Gurtej S. Sandhu ,  Garo Derderian

    IPC分类号： H01L2120

    CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

    摘要： Formation of a structure includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

    摘要翻译： 结构的形成包括通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高介电材料，以及在高电介质材料上形成第二电极。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

    Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
    2.
    发明授权
    Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 有权

    公开(公告)号：US06596583B2

    公开(公告)日：2003-07-22

    申请号：US10002906

    申请日：2001-10-29

    申请人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

    发明人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

    IPC分类号： H01L218242

    CPC分类号： H01L28/84 ,  H01L21/31637 ,  H01L28/55 ,  H01L28/65

    摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

    Methods for use in forming a capacitor and structures resulting from same
    3.
    发明授权
    Methods for use in forming a capacitor and structures resulting from same 失效
    用于形成电容器和由其产生的结构的方法

    公开(公告)号：US06890814B2

    公开(公告)日：2005-05-10

    申请号：US10784563

    申请日：2004-02-23

    申请人： Gurtej S. Sandhu ,  Garo Derderian

    发明人： Gurtej S. Sandhu ,  Garo Derderian

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/31 ,  H01L21/425 ,  H01L21/469 ,  H01L21/8242 ,  H01L23/58

    CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

    摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

    摘要翻译： 用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第 高介电材料。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

    Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
    4.
    发明授权
    Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 失效
    含有钌和钨的层的形成方法和集成电路结构

    公开(公告)号：US06833576B2

    公开(公告)日：2004-12-21

    申请号：US10002779

    申请日：2001-10-29

    申请人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

    发明人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

    IPC分类号： H01L27108

    CPC分类号： H01L28/84 ,  H01L21/31637 ,  H01L28/55 ,  H01L28/65

    摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

    摘要翻译： 具有增加的电容的电容器包括增强的表面积（粗糙表面）导电层或与高介电常数材料相容的其它层。 在一种方法中，用于这种电容器的增强表面积导电层是通过在高温或高于500℃，低压75托或更低，最理想的5托或更低的高温下处理氧化钌层形成的， 产生具有至少约100埃的平均特征尺寸的纹理表面的粗糙钌层。 初始氧化钌层可以通过化学气相沉积技术或溅射技术等来提供。 该层可以形成在下面的导电层上。 处理可以在惰性环境或还原环境中进行。 可以在处理期间或之后使用供氮环境或供氮还原环境以钝化钌以改善与高介电常数电介质材料的相容性。 氧化环境中的处理也可以进行以钝化粗糙层。 可以使用粗糙化的钌层来形成增强表面积的导电层。 所形成的增强表面积导电层可以在诸如DRAM等的存储单元中的集成电路中形成存储电容器的板。 在另一种方法中，提供氮化钨层作为这种电容器的第一电极。 电容器或至少氮化钨层被退火以增加电容器的电容。

    Methods for use in forming a capacitor and structures resulting from same
    5.
    发明授权
    Methods for use in forming a capacitor and structures resulting from same 失效
    用于形成电容器和由其产生的结构的方法

    公开(公告)号：US06696745B2

    公开(公告)日：2004-02-24

    申请号：US10087535

    申请日：2002-02-27

    申请人： Gurtej S. Sandhu ,  Garo Derderian

    发明人： Gurtej S. Sandhu ,  Garo Derderian

    IPC分类号： H01L21425

    CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

    摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

    摘要翻译： 用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第 高介电材料。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

    Methods for use in forming a capacitor
    6.
    发明授权
    Methods for use in forming a capacitor 失效
    用于形成电容器的方法

    公开(公告)号：US06200874B1

    公开(公告)日：2001-03-13

    申请号：US08918634

    申请日：1997-08-22

    申请人： Gurtej S. Sandhu ,  Garo Derderian

    发明人： Gurtej S. Sandhu ,  Garo Derderian

    IPC分类号： H01L2120

    CPC分类号： H01L28/40 ,  H01L27/1085 ,  H01L28/65 ,  H01L28/75

    摘要： A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

    摘要翻译： 用于形成电容器的方法包括：通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在第 高介电材料。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

    Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof
    7.
    发明授权
    Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof 有权
    使用相对于其电极提供的含过量含氧材料形成的电容器结构

    公开(公告)号：US6124626A

    公开(公告)日：2000-09-26

    申请号：US383052

    申请日：1999-08-25

    申请人： Gurtej S. Sandhu ,  Garo Derderian

    发明人： Gurtej S. Sandhu ,  Garo Derderian

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/31 ,  H01L21/425 ,  H01L21/469 ,  H01L21/8242 ,  H01L23/58

    CPC分类号： H01L28/40 ,  H01L28/65 ,  H01L28/75 ,  H01L27/1085

    摘要： Formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

    摘要翻译： 电容器的形成包括通过在衬底组件的一部分上形成第一电极来提供电容器结构，在第一电极的至少一部分上形成高电介质材料，以及在高电介质材料上形成第二电极。 可以在第二电极的至少一部分上形成附加层。 其上形成有第一电极的基板组件的部分和/或形成在第二电极上的层形成为过量的含氧材料。

    Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
    8.
    发明授权
    Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 有权
    含有钌和钨的层的形成方法和集成电路结构

    公开(公告)号：US07253076B1

    公开(公告)日：2007-08-07

    申请号：US09590795

    申请日：2000-06-08

    申请人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

    发明人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

    IPC分类号： H01L21/20

    CPC分类号： H01L28/84 ,  H01L21/31637 ,  H01L28/55 ,  H01L28/65

    摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

    摘要翻译： 具有增加的电容的电容器包括增强的表面积（粗糙表面）导电层或与高介电常数材料相容的其它层。 在一种方法中，用于这种电容器的增强表面积导电层是通过在高温或高于500℃，低压75托或更低，最理想的5托或更低的高温下处理氧化钌层形成的， 产生具有至少约100埃的平均特征尺寸的纹理表面的粗糙钌层。 初始氧化钌层可以通过化学气相沉积技术或溅射技术等来提供。 该层可以形成在下面的导电层上。 处理可以在惰性环境或还原环境中进行。 可以在处理期间或之后使用供氮环境或供氮还原环境以钝化钌以改善与高介电常数电介质材料的相容性。 氧化环境中的处理也可以进行以钝化粗糙层。 可以使用粗糙化的钌层来形成增强表面积的导电层。 所形成的增强表面积导电层可以在诸如DRAM等的存储单元中的集成电路中形成存储电容器的板。 在另一种方法中，提供氮化钨层作为这种电容器的第一电极。 电容器或至少氮化钨层被退火以增加电容器的电容。

    Pitch multiplication spacers and methods of forming the same
    9.
    发明授权
    Pitch multiplication spacers and methods of forming the same 有权
    间距倍增器及其形成方法

    公开(公告)号：US09099314B2

    公开(公告)日：2015-08-04

    申请号：US12827506

    申请日：2010-06-30

    申请人： Gurtej S. Sandhu ,  Kirk D. Prall

    发明人： Gurtej S. Sandhu ,  Kirk D. Prall

    IPC分类号： H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3205

    CPC分类号： H01L21/67063 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32053 ,  H01L21/32134

    摘要： Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate.

    摘要翻译： 在不执行间隔物蚀刻的情况下形成间距倍增过程中的间隔物。 相反，心轴形成在衬底上，然后心轴的侧面例如在氧化，氮化或硅化步骤中反应，以形成相对于心轴的未反应部分可以选择性去除的材料。 选择性地去除未反应部分以留下独立间隔物的图案。 独立的间隔物可以用作后续处理步骤的掩模，例如蚀刻基底。