Invention Grant
- Patent Title: Non-self-aligned side channel implants for flash memory cells
- Patent Title (中): 用于闪存单元的非自对准侧通道植入物
-
Application No.: US991687Application Date: 1997-12-16
-
Publication No.: US6127222APublication Date: 2000-10-03
- Inventor: Scott D. Luning , Mark Randolph
- Applicant: Scott D. Luning , Mark Randolph
- Applicant Address: CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: CA Sunnyvale
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A system and method for providing a flash memory cell on a semiconductor substrate are disclosed. The system and method include providing a side implant and providing an implant in at least one of a drain or a source of the flash memory cell.
Public/Granted literature
- US5343989A Reduced wear cable carrier and pads Public/Granted day:1994-09-06
Information query
IPC分类:
