发明授权
US06129957A Method of forming a second antiferromagnetic exchange-coupling layer for
magnetoresistive (MR) and giant MR (GMR) applications
失效
形成用于磁阻（MR）和巨磁（MR）应用的第二反铁磁交换耦合层的方法
- 专利标题： Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications
- 专利标题（中）： 形成用于磁阻（MR）和巨磁（MR）应用的第二反铁磁交换耦合层的方法
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申请号： US415247申请日： 1999-10-12
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公开(公告)号： US06129957A公开(公告)日： 2000-10-10
- 发明人: Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
- 申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tai Min , Hui-Chuan Wang , Cherng-Chyi Han , Mao-Min Chen , Po-Kang Wan
- 申请人地址： CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： CA Milpitas
- 主分类号： G01R33/09
- IPC分类号： G01R33/09 ; G11B5/31 ; G11B5/39 ; H01F10/32 ; H01F41/22 ; H01F41/30 ; H01L43/08 ; H01L43/12 ; B29C35/08 ; H01F1/00
摘要：
A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.
公开/授权文献
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