发明授权
- 专利标题： Silicon carbide semiconductor device and process for manufacturing same
- 专利标题（中）： 碳化硅半导体器件及其制造方法
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申请号： US23280申请日： 1998-02-13
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公开(公告)号： US6133587A公开(公告)日： 2000-10-17
- 发明人: Yuichi Takeuchi , Takeshi Miyajima , Norihito Tokura , Hiroo Fuma , Toshio Murata , Takamasa Suzuki , Shoichi Onda
- 申请人： Yuichi Takeuchi , Takeshi Miyajima , Norihito Tokura , Hiroo Fuma , Toshio Murata , Takamasa Suzuki , Shoichi Onda
- 申请人地址： JPX Kariya
- 专利权人： Denso Corporation
- 当前专利权人： Denso Corporation
- 当前专利权人地址： JPX Kariya
- 优先权： JPX8-009625 19960123; JPX9-030409 19970214; JPX9-030410 19970214
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L29/06 ; H01L29/24 ; H01L29/78 ; H01L31/0312
摘要：
A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in the p-type silicon carbide semiconductor layer 3. A trench 7 is formed in a predetermined region in the n.sup.+ -type source region 5, which trench 7 passes through the n.sup.+ -type source region 5 and the p-type silicon carbide semiconductor layer 3, reaching the n.sup.- -type silicon carbide semiconductor layer 2. The trench 7 has side walls 7a perpendicular to the surface of the semiconductor substrate 4 and a bottom side 7b parallel to the surface of the semiconductor substrate 4. The hexagonal region surrounded by the side walls 7a of the trench 7 is an island semiconductor region 12. A high-reliability gate insulating film 8 is obtained by forming a gate insulating layer on the side walls 7a which surround the island semiconductor region 12.
公开/授权文献
- US5288312A Fluid slug flow mitigation and gas separation system 公开/授权日：1994-02-22
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