发明授权
- 专利标题: Method for erasing memory cells in a flash memory device
- 专利标题(中): 擦除闪存设备中的存储单元的方法
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申请号: US213723申请日: 1998-12-17
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公开(公告)号: US6137729A公开(公告)日: 2000-10-24
- 发明人: Ki-Hwan Choi
- 申请人: Ki-Hwan Choi
- 申请人地址: KRX
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX
- 优先权: KRX97-77267 19971229
- 主分类号: G11C16/02
- IPC分类号: G11C16/02 ; G11C16/06 ; G11C16/16 ; G11C16/00
摘要:
A method for erasing electrically erasable and programmable memory cells arranged in a plurality of sectors, in a memory device receiving a suspend command and a resume command, the erasing having steps of pre-programming, main erasing and post-programming, is disclosed. The method includes the steps of stopping a current step of the erasing when the suspend command appears thereat and storing a flag signal in a predetermined memory area, performing a read or programming for another sector after the stopping the current step until the resume command is applied thereto, and resuming the current step in response to an activation of the resume command.
公开/授权文献
- US5400933A Golf bag carrier for a vehicle 公开/授权日:1995-03-28