发明授权
- 专利标题： Method of forming asymmetrically doped source/drain regions
- 专利标题（中）： 形成不对称掺杂源极/漏极区域的方法
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申请号： US196439申请日： 1998-11-20
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公开(公告)号： US6140186A公开(公告)日： 2000-10-31
- 发明人: Ming-Ren Lin , Peng Fang , Donald L. Wollesen
- 申请人： Ming-Ren Lin , Peng Fang , Donald L. Wollesen
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/266
- IPC分类号： H01L21/266 ; H01L21/336 ; H01L21/8238 ; H01L29/78
摘要：
Asymmetrically doped source/drain regions of a transistor are formed employing protective insulating layers to prevent a portion of the gate electrode from receiving an excessive impurity implantation dose and penetrating through the underlying gate insulating layer into the semiconductor substrate. Sidewall spacers are employed during heavy implantation.
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