Multi-well time-lapse nodal analysis of transient production systems
    2.
    发明授权
    Multi-well time-lapse nodal analysis of transient production systems 有权
    瞬时生产系统的多时间延时节点分析

    公开(公告)号:US08788252B2

    公开(公告)日:2014-07-22

    申请号:US13281152

    申请日:2011-10-25

    IPC分类号: G06G7/48

    CPC分类号: E21B43/00

    摘要: A method, apparatus and program product utilize an analytical reservoir simulator to perform inflow simulation for a node during nodal analysis in a multi-well petroleum production system. By doing so, time-lapse nodal analysis may be performed of a transient production system in a multi-well context, often taking into account production history and the transient behavior of a reservoir system. Moreover, in some instances, an interference effect from different wells in a multi-well production system may be considered, and in some instances nodal analysis may be performed simultaneously for multiple wells. Multi-layer nodal analysis may also be performed in some instances to account for the pressure loss in a wellbore between multiple layers.

    摘要翻译: 一种方法,装置和程序产品利用分析储层模拟器在多井石油生产系统中的节点分析期间对节点进行流入模拟。 通过这样做,可以在多井环境中对瞬时生产系统进行延时节点分析,通常考虑到油藏系统的生产历史和瞬态特性。 此外,在一些情况下,可以考虑来自多井生产系统中的不同井的干扰效应,并且在一些情况下,可以针对多个井同时进行节点分析。 在某些情况下也可以执行多层节点分析,以解决多层之间的井眼中的压力损失。

    Edge-lighting type backlight module
    3.
    发明授权
    Edge-lighting type backlight module 失效
    边缘照明型背光模组

    公开(公告)号:US08469580B2

    公开(公告)日:2013-06-25

    申请号:US12981195

    申请日:2010-12-29

    申请人: Peng-Fang Chen

    发明人: Peng-Fang Chen

    IPC分类号: F21V7/04

    摘要: An edge-lighting type backlight module includes a light guide plate, a light source module, a back plate, a thermal conductive element, and a thermal insulating element. The light guide plate has a light-emitting surface, a bottom surface opposite the light-emitting surface, and at least one side surface connected between the light-emitting surface and the bottom surface. The light source module is disposed adjacent to the side surface, and the back plate is disposed adjacent to the bottom surface. The thermal conductive element has a base portion touching the light source module and an extension portion extending to one side of the back plate. The thermal insulating element is connected between the back plate and the thermal conductive element to reduce the heat conduction between the light source module and the back plate.

    摘要翻译: 边缘照明型背光模块包括导光板,光源模块,背板,导热元件和绝热元件。 导光板具有发光面,与发光面相反的底面以及连接在发光面与底面之间的至少一个侧面。 光源模块靠近侧面设置,背板与底面相邻设置。 导热元件具有接触光源模块的基部和延伸到背板一侧的延伸部分。 绝热元件连接在背板和导热元件之间,以减少光源模块和背板之间的热传导。

    MULTI-WELL TIME-LAPSE NODAL ANALYSIS OF TRANSIENT PRODUCTION SYSTEMS
    4.
    发明申请
    MULTI-WELL TIME-LAPSE NODAL ANALYSIS OF TRANSIENT PRODUCTION SYSTEMS 有权
    多时间生产系统的多时间暂态分析

    公开(公告)号:US20120101787A1

    公开(公告)日:2012-04-26

    申请号:US13281152

    申请日:2011-10-25

    IPC分类号: G06F17/11 G06G7/48

    CPC分类号: E21B43/00

    摘要: A method, apparatus and program product utilize an analytical reservoir simulator to perform inflow simulation for a node during nodal analysis in a multi-well petroleum production system. By doing so, time-lapse nodal analysis may be performed of a transient production system in a multi-well context, often taking into account production history and the transient behavior of a reservoir system. Moreover, in some instances, an interference effect from different wells in a multi-well production system may be considered, and in some instances nodal analysis may be performed simultaneously for multiple wells. Multi-layer nodal analysis may also be performed in some instances to account for the pressure loss in a wellbore between multiple layers.

    摘要翻译: 一种方法,装置和程序产品利用分析储层模拟器在多井石油生产系统中的节点分析期间对节点进行流入模拟。 通过这样做,可以在多井环境中对瞬时生产系统进行延时节点分析,通常考虑到油藏系统的生产历史和瞬态特性。 此外,在一些情况下,可以考虑来自多井生产系统中的不同井的干扰效应,并且在一些情况下,可以针对多个井同时进行节点分析。 在某些情况下也可以执行多层节点分析,以解决多层之间的井眼中的压力损失。

    MEMORY MANAGEMENT METHOD DURING POWER-ON SELF TEST
    5.
    发明申请
    MEMORY MANAGEMENT METHOD DURING POWER-ON SELF TEST 审中-公开
    上电自检过程中的内存管理方法

    公开(公告)号:US20100070680A1

    公开(公告)日:2010-03-18

    申请号:US12265830

    申请日:2008-11-06

    IPC分类号: G06F12/00

    CPC分类号: G06F12/0638 G06F11/2284

    摘要: A memory management method during a power-on self test is used to perform an access management on an option ROM during a power-on self test after a personal computer is powered on. The memory management method includes the following steps. When a BIOS is booted, an option ROM is detected. A memory segment is designated in a conventional memory. It is determined whether the memory segment is empty or not. If the memory segment is not empty, a register segment with the same capacity as the memory segment is applied for from an extended memory, and data in the memory segment is moved to the register segment for being stored. If the memory segment is empty, data in the option ROM is moved to the memory segment. The option ROM in the memory segment is set.

    摘要翻译: 上电自检期间的存储器管理方法用于在个人计算机上电之后的上电自检期间对选项ROM执行访问管理。 存储器管理方法包括以下步骤。 当BIOS启动时,检测到选件ROM。 在常规存储器中指定存储器段。 确定内存段是否为空。 如果存储器段不为空,则从扩展存储器应用与存储器段相同容量的寄存器段,并且将存储器段中的数据移动到寄存器段以供存储。 如果内存段为空,则选项ROM中的数据将移动到内存段。 内存段中的选项ROM已设置。

    Test system and methodology to improve stacked NAND gate based critical path performance and reliability
    6.
    发明授权
    Test system and methodology to improve stacked NAND gate based critical path performance and reliability 失效
    测试系统和方法,以提高堆叠NAND门的关键路径性能和可靠性

    公开(公告)号:US06216099B1

    公开(公告)日:2001-04-10

    申请号:US08924090

    申请日:1997-09-05

    IPC分类号: G06F1750

    CPC分类号: G01R31/31704

    摘要: A test system and methodology to improve the performance and reliability of critical paths including stacked NAND gates with sub-minimum channel transistors employs one or more inverter based ring oscillators to generate reliability data. The reliability data is used to calibrate an aged transistor model, which describes the hot carrier reliability of sub-minimum channel length transistors. A computer simulation uses the calibrated, aged transistor model to simulate the critical path circuitry including the stacked NAND gates.

    摘要翻译: 提高关键路径的性能和可靠性的测试系统和方法,包括具有次最小通道晶体管的堆叠NAND门采用一个或多个基于逆变器的环形振荡器来产生可靠性数据。 可靠性数据用于校准老化的晶体管模型,其描述了次最小沟道长度晶体管的热载流子可靠性。 计算机模拟使用经校准的老化晶体管模型来模拟包括堆叠NAND门的关键路径电路。

    Method for determining a reliable oxide thickness
    7.
    发明授权
    Method for determining a reliable oxide thickness 失效
    确定可靠的氧化物厚度的方法

    公开(公告)号:US6133746A

    公开(公告)日:2000-10-17

    申请号:US163414

    申请日:1998-09-30

    申请人: Peng Fang Hao Fang

    发明人: Peng Fang Hao Fang

    CPC分类号: H01L22/34 G01N27/92

    摘要: A method for determining a reliable gate oxide thickness for a transistor involves subjecting test transistors to an alternating current (AC) voltage until the test transistors break down. The breakdown times of the test transistors are measured and correlated with the corresponding gate oxide thickness of the test transistor to form a reliability model of the transistor. The reliable gate oxide thickness is determined by extrapolating the reliability model out to a predetermined period of time for which reliability is desired, for example, ten years.

    摘要翻译: 用于确定晶体管的可靠栅极氧化物厚度的方法包括使测试晶体管经受交流(AC)电压,直到测试晶体管分解为止。 测量测试晶体管的击穿时间并与测试晶体管的相应栅极氧化物厚度相关联,以形成晶体管的可靠性模型。 可靠的栅极氧化物厚度通过将可靠性模型推断到需要可靠性的预定时间段(例如十年)来确定。

    Light-emitting diode light bulb and application thereof
    8.
    发明授权
    Light-emitting diode light bulb and application thereof 失效
    发光二极管灯泡及其应用

    公开(公告)号:US08113698B2

    公开(公告)日:2012-02-14

    申请号:US12536511

    申请日:2009-08-06

    IPC分类号: F21V29/00

    摘要: A light-emitting diode (LED) light bulb and an application thereof are described. The light-emitting diode light bulb comprises: a light-emitting diode light source module; a base, wherein the light-emitting diode light source module is disposed on the base; and a driver portion to drive the light-emitting diode light source module, comprising a rotation shaft, wherein the driver portion is connected to the base via the rotation shaft, such that the light-emitting diode light source module can rotate relative to the driver portion.

    摘要翻译: 描述了发光二极管(LED)灯泡及其应用。 发光二极管灯泡包括:发光二极管光源模块; 基座,其中所述发光二极管光源模块设置在所述基座上; 以及驱动部,驱动发光二极管光源模块,其包括旋转轴,其中所述驱动器部分经由所述旋转轴连接到所述基座,使得所述发光二极管光源模块可相对于所述驱动器旋转 一部分。

    EDGE-LIGHTING TYPE BACKLIGHT MODULE
    9.
    发明申请
    EDGE-LIGHTING TYPE BACKLIGHT MODULE 失效
    边缘型背光模组

    公开(公告)号:US20110170315A1

    公开(公告)日:2011-07-14

    申请号:US12981195

    申请日:2010-12-29

    申请人: Peng-Fang CHEN

    发明人: Peng-Fang CHEN

    IPC分类号: F21V8/00

    摘要: An edge-lighting type backlight module includes a light guide plate, a light source module, a back plate, a thermal conductive element, and a thermal insulating element. The light guide plate has a light-emitting surface, a bottom surface opposite the light-emitting surface, and at least one side surface connected between the light-emitting surface and the bottom surface. The light source module is disposed adjacent to the side surface, and the back plate is disposed adjacent to the bottom surface. The thermal conductive element has a base portion touching the light source module and an extension portion extending to one side of the back plate. The thermal insulating element is connected between the back plate and the thermal conductive element to reduce the heat conduction between the light source module and the back plate.

    摘要翻译: 边缘照明型背光模块包括导光板,光源模块,背板,导热元件和绝热元件。 导光板具有发光面,与发光面相反的底面以及连接在发光面与底面之间的至少一个侧面。 光源模块靠近侧面设置,背板与底面相邻设置。 导热元件具有接触光源模块的基部和延伸到背板一侧的延伸部分。 绝热元件连接在背板和导热元件之间,以减少光源模块和背板之间的热传导。

    Deuterium doping for hot carrier reliability improvement
    10.
    发明授权
    Deuterium doping for hot carrier reliability improvement 失效
    氘掺杂热载体可靠性提高

    公开(公告)号:US6143632A

    公开(公告)日:2000-11-07

    申请号:US993049

    申请日:1997-12-18

    申请人: Emi Ishida Peng Fang

    发明人: Emi Ishida Peng Fang

    摘要: A semiconductor device having reduced hot carrier degradation is achieved by doping the semiconductor substrate and gate oxide with deuterium. A conventional semiconductor device is formed with sequentially deposited metal layers and dielectric layers and a topside protective dielectric layer deposited thereon. Deuterium is introduced to the semiconductor device by using deuterium-containing reactants in at least one of the semiconductor manufacturing steps to passivate dangling silicon bonds at the silicon/oxide interface region.

    摘要翻译: 具有减少的热载流子劣化的半导体器件通过用氘掺杂半导体衬底和栅极氧化物来实现。 常规的半导体器件形成有顺序沉积的金属层和介电层以及沉积在其上的顶侧保护电介质层。 通过在半导体制造步骤中的至少一个中使用含氘的反应物,在硅/氧化物界面区域钝化悬挂的硅键,将氘引入半导体器件。