摘要:
A process includes roasting a TiO2-containing material in the presence of an alkaline material to form a roasted product; leaching the roasted product with an acidic solution to form a leach liquor; extracting the leach liquor with an extractant to form a raffinate including a Ti4+ species; hydrolyzing the Ti4+ species to form a hydrolyzed material that includes H2TiO3; calcining the hydrolyzed material; and recovering a TiO2 product.
摘要:
A method, apparatus and program product utilize an analytical reservoir simulator to perform inflow simulation for a node during nodal analysis in a multi-well petroleum production system. By doing so, time-lapse nodal analysis may be performed of a transient production system in a multi-well context, often taking into account production history and the transient behavior of a reservoir system. Moreover, in some instances, an interference effect from different wells in a multi-well production system may be considered, and in some instances nodal analysis may be performed simultaneously for multiple wells. Multi-layer nodal analysis may also be performed in some instances to account for the pressure loss in a wellbore between multiple layers.
摘要:
An edge-lighting type backlight module includes a light guide plate, a light source module, a back plate, a thermal conductive element, and a thermal insulating element. The light guide plate has a light-emitting surface, a bottom surface opposite the light-emitting surface, and at least one side surface connected between the light-emitting surface and the bottom surface. The light source module is disposed adjacent to the side surface, and the back plate is disposed adjacent to the bottom surface. The thermal conductive element has a base portion touching the light source module and an extension portion extending to one side of the back plate. The thermal insulating element is connected between the back plate and the thermal conductive element to reduce the heat conduction between the light source module and the back plate.
摘要:
A method, apparatus and program product utilize an analytical reservoir simulator to perform inflow simulation for a node during nodal analysis in a multi-well petroleum production system. By doing so, time-lapse nodal analysis may be performed of a transient production system in a multi-well context, often taking into account production history and the transient behavior of a reservoir system. Moreover, in some instances, an interference effect from different wells in a multi-well production system may be considered, and in some instances nodal analysis may be performed simultaneously for multiple wells. Multi-layer nodal analysis may also be performed in some instances to account for the pressure loss in a wellbore between multiple layers.
摘要:
A memory management method during a power-on self test is used to perform an access management on an option ROM during a power-on self test after a personal computer is powered on. The memory management method includes the following steps. When a BIOS is booted, an option ROM is detected. A memory segment is designated in a conventional memory. It is determined whether the memory segment is empty or not. If the memory segment is not empty, a register segment with the same capacity as the memory segment is applied for from an extended memory, and data in the memory segment is moved to the register segment for being stored. If the memory segment is empty, data in the option ROM is moved to the memory segment. The option ROM in the memory segment is set.
摘要:
A test system and methodology to improve the performance and reliability of critical paths including stacked NAND gates with sub-minimum channel transistors employs one or more inverter based ring oscillators to generate reliability data. The reliability data is used to calibrate an aged transistor model, which describes the hot carrier reliability of sub-minimum channel length transistors. A computer simulation uses the calibrated, aged transistor model to simulate the critical path circuitry including the stacked NAND gates.
摘要:
A method for determining a reliable gate oxide thickness for a transistor involves subjecting test transistors to an alternating current (AC) voltage until the test transistors break down. The breakdown times of the test transistors are measured and correlated with the corresponding gate oxide thickness of the test transistor to form a reliability model of the transistor. The reliable gate oxide thickness is determined by extrapolating the reliability model out to a predetermined period of time for which reliability is desired, for example, ten years.
摘要:
A light-emitting diode (LED) light bulb and an application thereof are described. The light-emitting diode light bulb comprises: a light-emitting diode light source module; a base, wherein the light-emitting diode light source module is disposed on the base; and a driver portion to drive the light-emitting diode light source module, comprising a rotation shaft, wherein the driver portion is connected to the base via the rotation shaft, such that the light-emitting diode light source module can rotate relative to the driver portion.
摘要:
An edge-lighting type backlight module includes a light guide plate, a light source module, a back plate, a thermal conductive element, and a thermal insulating element. The light guide plate has a light-emitting surface, a bottom surface opposite the light-emitting surface, and at least one side surface connected between the light-emitting surface and the bottom surface. The light source module is disposed adjacent to the side surface, and the back plate is disposed adjacent to the bottom surface. The thermal conductive element has a base portion touching the light source module and an extension portion extending to one side of the back plate. The thermal insulating element is connected between the back plate and the thermal conductive element to reduce the heat conduction between the light source module and the back plate.
摘要:
A semiconductor device having reduced hot carrier degradation is achieved by doping the semiconductor substrate and gate oxide with deuterium. A conventional semiconductor device is formed with sequentially deposited metal layers and dielectric layers and a topside protective dielectric layer deposited thereon. Deuterium is introduced to the semiconductor device by using deuterium-containing reactants in at least one of the semiconductor manufacturing steps to passivate dangling silicon bonds at the silicon/oxide interface region.