发明授权
US6140218A Method for fabricating a T-shaped hard mask/conductor profile to improve
self-aligned contact isolation
有权
用于制造T形硬掩模/导体轮廓以改善自对准接触隔离的方法
- 专利标题: Method for fabricating a T-shaped hard mask/conductor profile to improve self-aligned contact isolation
- 专利标题(中): 用于制造T形硬掩模/导体轮廓以改善自对准接触隔离的方法
-
申请号: US329782申请日: 1999-06-10
-
公开(公告)号: US6140218A公开(公告)日: 2000-10-31
- 发明人: Jen-Cheng Liu , Li-Chih Chao , Huan-Just Lin , Yung-Kuan Hsiao
- 申请人: Jen-Cheng Liu , Li-Chih Chao , Huan-Just Lin , Yung-Kuan Hsiao
- 申请人地址: TWX Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company
- 当前专利权人: Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址: TWX Hsin-Chu
- 主分类号: H01L21/033
- IPC分类号: H01L21/033 ; H01L21/28 ; H01L21/60 ; H01L21/44
摘要:
The present invention provides a method of fabricating a T-shaped hard mask/conductive pattern profile and a process of etching a self-aligned contact opening using a T-shaped hard mask/conductive pattern profile to improve the self-aligned contact isolation. The process begins by forming a polysilicon or more preferably a polysilicon/silicide conductive layer over a semiconductor substrate. A silicon oxynitride hard mask layer is formed over the conductive layer. The silicon oxynitride hard mask layer is patterned to form a hard mask pattern. The conductive layer is patterned to form a conductive pattern in a three step etch using Cl.sub.2 and HBr chemistry. The silicon oxynitride hard mask releases oxygen during the conductive layer etch resulting in a T-shaped hard mask/conductive pattern profile (e.g. the width of the hard mask is greater than the width of the conductive pattern after etching). In a preferred embodiment, the a T-shaped hard mask/conductive pattern profile is used to form a self-aligned contact for a capacitor over bitline structure.