发明授权
US6140248A Process for producing a semiconductor device with a roughened
semiconductor surface
失效
用于生产具有粗糙化的半导体表面的半导体器件的工艺
- 专利标题： Process for producing a semiconductor device with a roughened semiconductor surface
- 专利标题（中）： 用于生产具有粗糙化的半导体表面的半导体器件的工艺
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申请号： US918251申请日： 1997-08-25
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公开(公告)号： US6140248A公开(公告)日： 2000-10-31
- 发明人: Helmut Fischer , Gisela Lang , Reinhard Sedlmeier , Ernst Nirschl
- 申请人： Helmut Fischer , Gisela Lang , Reinhard Sedlmeier , Ernst Nirschl
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX19506323 20000117
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L33/22 ; H01L33/40 ; H01L21/302
摘要：
A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.
公开/授权文献
- US5308304A Multi-hip exerciser 公开/授权日：1994-05-03
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