公开(公告)号：US06281031B1

公开(公告)日：2001-08-28

申请号：US09250866

申请日：1999-02-16

申请人： Josef Maurer ,  Gisela Lang

发明人： Josef Maurer ,  Gisela Lang

IPC分类号： H01L2100

CPC分类号： H01L21/78

摘要： A semiconductor wafer, after having been provided with a multiplicity of optoelectronic semiconductor structures, is severed into a number of individual chips by abrasive cutting. After cutting, the chip flanks are etched with the chip surface protected. First, a covering layer is deposited over the entire surface of the semiconductor wafer which is provided with the diode structures. The covering layer is structured in such a manner that the covering layer is removed at the areas defined as cutting tracks. Then the semiconductor wafer is cut into individual chips by abrasive cutting with a cutting tool. The cutting tool is guided along the cutting tracks by appropriately moving the semiconductor wafer and the cutting tool relative to one another.

摘要翻译： 在已经设置有多个光电半导体结构之后，半导体晶片通过研磨切割被切割成多个单独的芯片。 切割后，芯片表面被保护的芯片表面蚀刻。 首先，在设置有二极管结构的半导体晶片的整个表面上沉积覆盖层。 覆盖层被构造成使得覆盖层在被限定为切割轨道的区域处被去除。 然后用切割工具通过研磨切割将半导体晶片切割成单独的芯片。 通过相对于彼此适当地移动半导体晶片和切割工具，切割工具沿着切割轨道被引导。

公开(公告)号：US06309953B1

公开(公告)日：2001-10-30

申请号：US09517299

申请日：2000-03-02

申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

IPC分类号： H01L2128

CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/00

摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an AlxGa1−xAs layer with an upper surface, where x≦0.40; applying a contact metallization made of a non-noble metallic material to the AlxGa1−xAs layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the AlxGa1−xAs layer by etching with an etching mixture of hydrogen peroxide ≧30% and hydrofluoric acid ≧40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0≦x≦1 and the upper surface of the AlxGa1−xAs layer is roughened by etching with nitric acid 65% at temperatures of between 0° C. and 30° C.

摘要翻译： 制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <= 0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> = 30％和氢氟酸≥40％（1000:6）的蚀刻混合物蚀刻1至2.5分钟来使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。

公开(公告)号：US6140248A

公开(公告)日：2000-10-31

申请号：US918251

申请日：1997-08-25

申请人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

发明人： Helmut Fischer ,  Gisela Lang ,  Reinhard Sedlmeier ,  Ernst Nirschl

IPC分类号： H01L29/06 ,  H01L33/22 ,  H01L33/40 ,  H01L21/302

CPC分类号： H01L33/22 ,  H01L29/0657 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/10156 ,  H01L2924/10157

摘要： A process for producing a semiconductor device includes the following sequential steps: producing a semiconductor body having an Al.sub.x Ga.sub.1-x As layer with an upper surface, where x.ltoreq.0.40; applying a contact metallization made of a non-noble metallic material to the Al.sub.x Ga.sub.1-x As layer; precleaning a semiconductor surface to produce a hydrophilic semiconductor surface; roughening the upper surface of the Al.sub.x Ga.sub.1-x As layer by etching with an etching mixture of hydrogen peroxide.gtoreq.30% and hydrofluoric acid.gtoreq.40% (1000:6) for a period of from 1 to 2.5 minutes; and re-etching with a dilute mineral acid. According to another embodiment, 0.ltoreq.x.ltoreq.1 and the upper surface of the Al.sub.x Ga.sub.1-x As layer is roughened by etching with nitric acid 65% at temperatures of between 0.degree. C. and 30.degree. C.

摘要翻译： 一种制造半导体器件的方法包括以下顺序步骤：制备具有上表面的Al x Ga 1-x As层的半导体本体，其中x <0.40; 将由非贵金属材料制成的接触金属化应用于Al x Ga 1-x As层; 预清洁半导体表面以产生亲水性半导体表面; 通过用过氧化氢> 30％和氢氟酸≥40％（1000:6）的蚀刻混合物进行1〜2.5分钟的时间，使Al x Ga 1-x As层的上表面粗糙化; 并用稀释的无机酸重新蚀刻。 根据另一个实施方案，通过在0℃至30℃的温度下用硝酸蚀刻65％使0≤x≤1并且Al x Ga 1-x As层的上表面被粗糙化。