发明授权
- 专利标题： Method of fabricating semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US340143申请日： 1999-06-28
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公开(公告)号： US6146938A公开(公告)日： 2000-11-14
- 发明人: Shigehiko Saida , Yoshitaka Tsunashima , Tsutomu Sato
- 申请人： Shigehiko Saida , Yoshitaka Tsunashima , Tsutomu Sato
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX10-182427 19980629
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/318 ; H01L21/8242
摘要：
A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.
公开/授权文献
- US5480348A Coin handling system with controlled coin discharge 公开/授权日：1996-01-02
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