公开(公告)号：US6146938A

公开(公告)日：2000-11-14

申请号：US340143

申请日：1999-06-28

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima ,  Tsutomu Sato

IPC分类号： H01L21/02 ,  H01L21/318 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/40 ,  H01L21/3185 ,  H01L27/1085

摘要： A native film formed on the surface of a silicon substrate is removed. Arsenic is doped into the surface of the silicon substrate to form an n-type impurity diffusion layer as a lower capacitor electrode. A silicon nitride film as a capacitor insulating film is formed on the n-type impurity diffusion layer without growing any oxide film on the surface of the n-type impurity diffusion layer. An upper capacitor electrode is formed on the silicon nitride film.

摘要翻译： 去除在硅衬底的表面上形成的天然膜。 砷被掺杂到硅衬底的表面中以形成作为下电容器电极的n型杂质扩散层。 在n型杂质扩散层上形成作为电容绝缘膜的氮化硅膜，而不会在n型杂质扩散层的表面上生长任何氧化膜。 在氮化硅膜上形成上部电容电极。

公开(公告)号：US07372113B2

公开(公告)日：2008-05-13

申请号：US10880508

申请日：2004-07-01

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L21/314

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。

公开(公告)号：US06790723B2

公开(公告)日：2004-09-14

申请号：US09984404

申请日：2001-10-30

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L218242

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US06538271B2

公开(公告)日：2003-03-25

申请号：US09874309

申请日：2001-06-06

申请人： Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2120

CPC分类号： H01L21/3185 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/345 ,  H01L27/10852 ,  H01L27/10861

摘要： A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.

摘要翻译： 半导体器件包括形成在半导体衬底上的半导体衬底和氮化硅膜。 氮化硅膜基本上不含Si-H键，并且每单位面积的Si-H密度为1×10 15 cm -2以下。

公开(公告)号：US06333547B1

公开(公告)日：2001-12-25

申请号：US09478369

申请日：2000-01-06

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 Cl 6）作为用于形成可能与氧化硅膜的蚀刻速率差异很大的氮化硅膜的Si原料。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US06326658B1

公开(公告)日：2001-12-04

申请号：US09404594

申请日：1999-09-24

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura ,  Masayuki Tanaka ,  Shigehiko Saida ,  Hirofumi Inoue ,  Takeshi Hamamoto

IPC分类号： H01L27108

CPC分类号： H01L27/10867

摘要： A buried strap is formed after forming an SiC layer on the side surface of a trench in order to suppress the epitaxial growth of Si from the side surface (single crystal Si) of the trench to the buried strap (polycrystalline Si) without causing an increase in the contact resistance in the post process accompanied by high temperature after formation of the buried strap.

摘要翻译： 在沟槽侧面上形成SiC层之后形成掩埋带，以抑制从沟槽的侧表面（单晶Si）到掩埋带（多晶Si）的Si的外延生长而不会增加 在后处理中的接触电阻伴随着形成埋藏带的高温。

公开(公告)号：US07129132B2

公开(公告)日：2006-10-31

申请号：US10895087

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01I21/336

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

公开(公告)号：US07098115B2

公开(公告)日：2006-08-29

申请号：US10895088

申请日：2004-07-21

申请人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Shigehiko Saida ,  Yoshitaka Tsunashima

IPC分类号： H01L21/76

CPC分类号： H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/3185 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/10873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

摘要翻译： 使用六氯二硅烷（Si 2 C 6 C 6）作为形成氮化硅膜的Si原料，其可以与氧化硅膜的蚀刻速率差别很大。 氮化硅膜通过LPCVD法形成。

公开(公告)号：US06794713B2

公开(公告)日：2004-09-21

申请号：US10655022

申请日：2003-09-05

申请人： Ichiro Mizushima ,  Shigehiko Saida ,  Takeo Furuhata ,  Yoshitaka Tsunashima

发明人： Ichiro Mizushima ,  Shigehiko Saida ,  Takeo Furuhata ,  Yoshitaka Tsunashima

IPC分类号： H01L2976

CPC分类号： H01L29/66477 ,  H01L21/28052 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/665

摘要： SiGe or SiC films are selectively grown on source/drain regions, followed by selectively growing silicon. A monocrystalline film having a high dislocation density or a polycrystalline film can be grown in growing the silicon film by making the C or Ge concentration higher than a predetermined level. The silicon layer on each of the source/drain regions is not monocrystalline or, even if monocrystalline, has a high density of dislocation. Therefore, the silicon film formed thereon is in the form of a monocrystalline silicon film having a high dislocation density or a polycrystalline silicon film. It is possible to suppress an impurity diffusion to reach a deep region caused by channeling of ions generated in the doping step by means of an ion implantation.

摘要翻译： SiGe或SiC膜选择性地在源极/漏极区域上生长，随后选择性地生长硅。 通过使C或Ge浓度高于预定水平，可以在生长硅膜时生长具有高位错密度的单晶膜或多晶膜。 源极/漏极区域中的每一个上的硅层不是单晶的，即使单晶也具有高密度的位错。 因此，其上形成的硅膜是具有高位错密度的单晶硅膜或多晶硅膜的形式。 可以通过离子注入来抑制在掺杂步骤中产生的离子的沟道引起的深度区域的杂质扩散。

公开(公告)号：US06774462B2

公开(公告)日：2004-08-10

申请号：US10278882

申请日：2002-10-24

申请人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

发明人： Masayuki Tanaka ,  Yoshio Ozawa ,  Shigehiko Saida ,  Akira Goda ,  Mitsuhiro Noguchi ,  Yuichiro Mitani ,  Yoshitaka Tsunashima

IPC分类号： H01L2358

CPC分类号： H01L21/022 ,  H01L21/0217 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/28247 ,  H01L21/28282 ,  H01L21/28518 ,  H01L21/3185 ,  H01L21/76838 ,  H01L21/76897 ,  H01L29/513 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/792

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜， 包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在 下氮化硅膜比上述氮化硅膜高。