An apparatus and method are presented for identifying a semiconductor die within a group of semiconductor dice formed upon a surface of the same semiconductor wafer. During wafer fabrication, several parallel-resonant electronic structures are formed within each die area of the semiconductor wafer. The parallel-resonant structures are configured such that each semiconductor die responds differently to an alternating current (a.c.) electrical signal. During an identification operation, an a.c. electrical signal is coupled to the parallel-resonant structures of a selected semiconductor die. The unique response of the parallel-resonant structures of the selected semiconductor die to the a.c. electrical signal is used to determine the position of the selected semiconductor die relative to other semiconductor dice formed from the same semiconductor wafer. The apparatus includes a includes a variable frequency oscillator configured to produce an a.c. voltage Vout, a probe, and a resistor. Voltage Vout is coupled to an inductive coil of the probe connected in series with the resistor. An a.c. voltage Vmeas developed across the resistor is used to determine the response of the selected semiconductor die to the a.c. signal. A graph of the ratio of the magnitude of voltage Vmeas to the magnitude of voltage Vout versus the corresponding frequency of the a.c. electrical signal is plotted and used to determine the position of the die relative to other semiconductor dice produced from the same semiconductor wafer.