发明授权
US6156594A Fabrication of bipolar/CMOS integrated circuits and of a capacitor
失效
双极/ CMOS集成电路和电容器的制造
- 专利标题： Fabrication of bipolar/CMOS integrated circuits and of a capacitor
- 专利标题（中）： 双极/ CMOS集成电路和电容器的制造
-
申请号： US970070申请日： 1997-11-13
-
公开(公告)号： US6156594A公开(公告)日： 2000-12-05
- 发明人: Yvon Gris
- 申请人： Yvon Gris
- 申请人地址： FRX Gentilly
- 专利权人： SGS-Thomson Microelectronics S.A.
- 当前专利权人： SGS-Thomson Microelectronics S.A.
- 当前专利权人地址： FRX Gentilly
- 优先权： FRX9614410 19961119
- 主分类号： H01L21/8249
- IPC分类号： H01L21/8249 ; H01L27/06 ; H01L21/8238
摘要：
The present invention relates to a method for fabricating an integrated circuit including MOS transistors and a bipolar transistor of NPN type, including the steps of: forming the MOS transistors, covering the entire structure with a protection layer, opening the protection layer at the base-emitter location of the bipolar transistor, forming a first P-type doped layer of polysilicon, a second layer of silicon nitride and a second oxide layer, opening these last three layers at the center of the emitter-base region of the bipolar transistor, and depositing a third silicon nitride layer, forming spacers, removing the apparent parts of the third layer of silicon nitride, and depositing a third N-type doped polysilicon layer.
公开/授权文献
- US5252904A Auto reverse circuit 公开/授权日：1993-10-12
信息查询
IPC分类:
