发明授权
- 专利标题： Semiconductor processing methods of forming insulative materials
- 专利标题（中）： 形成绝缘材料的半导体加工方法
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申请号： US200035申请日： 1998-11-25
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公开(公告)号： US6156674A公开(公告)日： 2000-12-05
- 发明人: Weimin Li , Zhiping Yin
- 申请人： Weimin Li , Zhiping Yin
- 申请人地址： ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/469
摘要：
In one aspect, the invention encompasses a semiconductor processing method wherein a first gaseous precursor compound is combined with a second gaseous precursor compound to form a material comprising carbon, silicon and oxygen. A layer of the material is formed over a semiconductive substrate. In another aspect, the invention encompasses another semiconductor processing method. Methylsilane is combined with a form of oxygen other than H.sub.2 O.sub.2 to form an insulative compound comprising silicon bound to CH.sub.3 groups and oxygen. A layer of the insulative compound is formed over a semiconductive substrate. In yet another aspect, the invention encompasses yet another semiconductor processing method. Methylsilane is subjected to a plasma treatment to form a layer over a semiconductive substrate, the layer comprises silicon bound to CH.sub.3 groups. The layer is exposed to oxygen to convert the layer to an insulative compound comprising silicon bound to oxygen as well as the CH.sub.3 groups.
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