发明授权
- 专利标题: Plasma processing method and apparatus
- 专利标题(中): 等离子体处理方法和装置
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申请号: US283987申请日: 1999-04-02
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公开(公告)号: US6158383A公开(公告)日: 2000-12-12
- 发明人: Seiichi Watanabe , Muneo Furuse , Hitoshi Tamura , Toru Otsubo
- 申请人: Seiichi Watanabe , Muneo Furuse , Hitoshi Tamura , Toru Otsubo
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-031665 19190220; JPX8-078934 19960401
- 主分类号: C23C16/511
- IPC分类号: C23C16/511 ; H01J37/32 ; C23C14/00 ; H05A1/24
摘要:
In a plasma processing method and apparatus, microwaves are radiated from a slot antenna set at the bottom of a resonator, a plasma is generated using the microwave and a sample is processed by the plasma. A plasma having a ring-form is generated by the microwaves radiated from the slot antennas, which are disposed at an angle which is neither in parallel to nor perpendicular to a surface current flowing on a slot antenna plate. Thereby, the sample is uniformly processed.
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