发明授权
- 专利标题： Method of forming self-aligned DRAM cell
- 专利标题（中）： 形成自对准DRAM单元的方法
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申请号： US437952申请日： 1999-11-12
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公开(公告)号： US6159808A公开(公告)日： 2000-12-12
- 发明人: Shu-Ya Chuang
- 申请人： Shu-Ya Chuang
- 申请人地址： TWX Hsinchu TWX Hsinchu
- 专利权人： United Semiconductor Corp.,United Microelectronics Corp.
- 当前专利权人： United Semiconductor Corp.,United Microelectronics Corp.
- 当前专利权人地址： TWX Hsinchu TWX Hsinchu
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L27/108 ; H01L21/336
摘要：
A method of forming a dynamic random access memory cell such that the gate conductive layer, the bit line contact, the node contact, the bit line and the node contact plug are all formed using self-aligned processes. By employing the self-aligned method of forming DRAM cell, isolation structures are no longer etched in the process of forming the node contact opening. In addition, the aspect ratio of the node contact opening is reduced and processing window is thereby widened.
公开/授权文献
- US5005074A Adaptive multistandard video comb filter 公开/授权日：1991-04-02
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