发明授权
- 专利标题： Semiconductor processing method and system using C.sub.5 F.sub.8
- 专利标题（中）： 半导体处理方法和系统采用C5F8
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申请号： US87848申请日： 1998-06-01
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公开(公告)号： US6159862A公开(公告)日： 2000-12-12
- 发明人: Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
- 申请人： Masahiro Yamada , Youbun Ito , Kouichiro Inazawa , Abron Toure , Kunihiko Hinata , Hiromi Sakima
- 申请人地址： JPX Tokyo
- 专利权人： Tokyo Electron Ltd.
- 当前专利权人： Tokyo Electron Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-368081 19971227
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/768 ; H01L21/30
摘要：
A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a silicon nitride (Si.sub.x N.sub.y) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.
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