发明授权
- 专利标题： Method of manufacturing ferroelectric memory device
- 专利标题（中）： 铁电存储器件的制造方法
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申请号： US456364申请日： 1999-12-08
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公开(公告)号： US06162649A公开(公告)日： 2000-12-19
- 发明人: Soon Yong Kweon , Seung Jin Yeom
- 申请人： Soon Yong Kweon , Seung Jin Yeom
- 申请人地址： KRX Kyoungki-do
- 专利权人： Hyundai Electronics Industries Co., Ltd.
- 当前专利权人： Hyundai Electronics Industries Co., Ltd.
- 当前专利权人地址： KRX Kyoungki-do
- 优先权： KRX98-57283 19981222
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/02 ; H01L21/28 ; H01L21/285 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L21/00
摘要：
A method of manufacturing a ferroelectric memory device capable of effectively preventing Ti from diffusing into a ferroelectric layer during thermal-treating of TiN/Ti which will be performed after, is disclosed. According to the present invention, a Pt layer for an upper elctrode of a capacitor is formed to a multi-layer by multi-step at high temperature, high pressure and low power, to densify its grain boundary. Furthermore, by adding O.sub.2 to sputtering gas when forming the Pt layer, thereby preventing Ti from diffusing into a ferroelectric layer through the Pt layer of the upper electrode. As a result, the electrical properties of a ferroelectric memory device are improved.
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