发明授权
- 专利标题： Method to reduce aspect ratio of DRAM peripheral contact
- 专利标题（中）： 降低DRAM周边接触宽高比的方法
-
申请号： US246919申请日： 1999-02-09
-
公开(公告)号： US6165867A公开(公告)日： 2000-12-26
- 发明人: Yeur-Luen Tu , Cheng-Yuan Hsu , Cheng-Yuan Chang
- 申请人： Yeur-Luen Tu , Cheng-Yuan Hsu , Cheng-Yuan Chang
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 优先权： TWX87116217 19980930
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8242 ; H01L21/20
摘要：
The present invention provides a method for reducing aspect ratio of DRAM peripheral contact so as to achieving a good contact etching and metal deposition by utilizing conventional equipment. Besides, the present invention provides a stop layer formed by a nitride layer to reduce the volcano effect resulted from the misalignment between stacked contacts. Furthermore, the present invention is capable of etching poly layer and oxide layer in a single step, whereby the height of the peripheral contact is substantially the same as, or lower than, the contact of the storage node of a capacitor. Therefore, the aspect ratio of DRAM peripheral contact can be reduced.
公开/授权文献
- US5686104A Stable oral CI-981 formulation and process of preparing same 公开/授权日：1997-11-11
信息查询
IPC分类:
