Invention Grant
- Patent Title: Plating process for fine pitch die in wafer form
- Patent Title (中): 晶圆形细微间距模具的电镀工艺
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Application No.: US287549Application Date: 1999-04-06
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Publication No.: US6166334APublication Date: 2000-12-26
- Inventor: Terry R. Galloway
- Applicant: Terry R. Galloway
- Applicant Address: CA Santa Clara
- Assignee: Integrated Device Technology, Inc.
- Current Assignee: Integrated Device Technology, Inc.
- Current Assignee Address: CA Santa Clara
- Main IPC: B23K3/06
- IPC: B23K3/06 ; H05K3/00 ; H05K3/34 ; H01R12/04 ; H05K1/11
Abstract:
Apertures in a tape formed on a substrate allow straight plating of solder bumps to heights above 4 mils. The solder bumps are combined with a lower density material to form an hourglass-shaped structure which allows interconnections to bonding pads of electronic components with pitches less than 9 mils.
Public/Granted literature
- US5550187A Method of preparing crosslinked biomaterial compositions for use in tissue augmentation Public/Granted day:1996-08-27
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