发明授权
US6166420A Method and structure of high and low K buried oxide for SoI technology
失效
用于SoI技术的高K和低K埋氧体的方法和结构
- 专利标题： Method and structure of high and low K buried oxide for SoI technology
- 专利标题（中）： 用于SoI技术的高K和低K埋氧体的方法和结构
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申请号： US526369申请日： 2000-03-16
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公开(公告)号： US6166420A公开(公告)日： 2000-12-26
- 发明人: Robert J. Gauthier, Jr. , Dominic J. Schepis , Steven H. Voldman
- 申请人： Robert J. Gauthier, Jr. , Dominic J. Schepis , Steven H. Voldman
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/762 ; H01L21/822 ; H01L27/12 ; H01L29/786 ; H01L29/00 ; H01L23/58
摘要：
A method and structure for forming an integrated circuit wafer comprises forming a substrate having first and second portions, depositing a first insulator over the substrate, patterning the first insulator such that the first insulator remains only over the first portion, depositing a second insulator over substrate (the first insulator has different thermal dissipation characteristics than the second insulator), polishing the second insulator to form a planar surface, and attaching a silicon film over the first insulator and the second insulator.
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