- 专利标题： Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
-
申请号： US08472270申请日： 1995-06-07
-
公开(公告)号： US06171512B2公开(公告)日： 2001-01-09
- 发明人: Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
- 申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
- 优先权： JP3-042212 19910215; JP3-042213 19910215; JP3-055601 19910228; JP3-055602 19910228; JP3-055603 19910228; JP3-055604 19910228; JP3-055605 19910228; JP3-055606 19910228; JP3-055607 19910228; JP3-055608 19910228; JP3-055609 19910228; JP3-055610 19910228; JP3-055611 19910228; JP3-055612 19910228; JP3-055613 19910228; JP3-055614 19910228; JP3-148160 19910524; JP3-148161 19910524; JP3-148163 19910524; JP3-148164 19910524; JP3-150980 19910528; JP3-150981 19910528; JP3-150982 19910528; JP3-150989 19910528; JP3-150990 19910528; JP3-150991 19910528; JP3-150992 19910528; JP3-150994 19910528; JP3-055755 19910627
- 主分类号： B31D300
- IPC分类号： B31D300
摘要：
A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.