发明授权
US06171921B2 Method for forming a thick-film resistor and thick-film resistor formed thereby
失效
用于形成由此形成的厚膜电阻器和厚膜电阻器的方法
- 专利标题: Method for forming a thick-film resistor and thick-film resistor formed thereby
- 专利标题(中): 用于形成由此形成的厚膜电阻器和厚膜电阻器的方法
-
申请号: US09093007申请日: 1998-06-05
-
公开(公告)号: US06171921B2公开(公告)日: 2001-01-09
- 发明人: Gregory J. Dunn , Steven M. Scheifers
- 申请人: Gregory J. Dunn , Steven M. Scheifers
- 主分类号: B05D512
- IPC分类号: B05D512
摘要:
A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer. Thereafter, subsequent processing is preformed to include the photoimageable layer as a permanent photoimageable layer of a circuit board, with the resistive mass and appropriate terminations forming a resistor in the permanent photoimageable layer.
信息查询