Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant

发明授权

US06174454B1 Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant 有权

标题翻译：用于具有低介电常数的有机旋涂玻璃绝缘层的选择性CMP的浆料配方

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专利标题： Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant
专利标题（中）： 用于具有低介电常数的有机旋涂玻璃绝缘层的选择性CMP的浆料配方
申请号： US09239664

申请日： 1999-01-29
公开(公告)号： US06174454B1

公开(公告)日： 2001-01-16
发明人: Ming-Shih Tsai , Shih-Tzung Chang , Bau-Tong Dai , Ying-Lang Wang
申请人： Ming-Shih Tsai , Shih-Tzung Chang , Bau-Tong Dai , Ying-Lang Wang
主分类号： C09K1306
IPC分类号： C09K1306

Slurry formulation for selective CMP of organic spin-on-glass insulating layer with low dielectric constant

摘要：

Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.

摘要（中）：

开发有机添加的低SOG电介质的浆料配方或CMP。使用具有各种添加剂的二氧化硅和氧化锆基浆料对具有各种有机含量的SOG层进行抛光实验。结果表明，随着SOG中有机物含量的增加，CMP抛光速率随着添加二氧化硅的KOH添加而降低。另一方面，氧化锆基浆料可以导致SOG（> 400nm / min）和热氧化物的更高的pl丝率。通过在氢氧化铵中加入不同量的四烷基可以实现1.2至9.1的波长选择性。

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