公开(公告)号：US06428721B1

公开(公告)日：2002-08-06

申请号：US09564546

申请日：2000-05-04

申请人： Katsuyoshi Ina ,  Tadahiro Kitamura ,  Satoshi Suzumura

发明人： Katsuyoshi Ina ,  Tadahiro Kitamura ,  Satoshi Suzumura

IPC分类号： C09K1306

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A polishing composition comprising the following components: (a) an abrasive, (b) &agr;-alanine, (c) hydrogen peroxide, and (d) water.

摘要翻译： 一种抛光组合物，其包含以下组分：（a）研磨剂，（b）α-丙氨酸，（c）过氧化氢和（d）水。

公开(公告)号：US06384001B2

公开(公告)日：2002-05-07

申请号：US08808014

申请日：1997-03-03

申请人： Max Hineman ,  Guy T. Blalock

发明人： Max Hineman ,  Guy T. Blalock

IPC分类号： C09K1306

CPC分类号： H01L21/02054 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/76838 ,  Y10S438/906

摘要： A dilute composition for use in semiconductor processing includes both phosphoric acid and acetic acid. Each of the acidic components may be at a concentration of less than about 10% by volume of the dilute composition. The dilute composition can be used for cleaning various surfaces, such as, for example, patterned metal layers and vias by exposing the surfaces to the dilute composition.

摘要翻译： 用于半导体加工的稀释组合物包括磷酸和乙酸。 每个酸性组分的浓度可以小于稀释组合物的约10体积％。 稀释组合物可用于通过将表面暴露于稀释组合物来清洁各种表面，例如图案化金属层和通孔。

公开(公告)号：US06666987B1

公开(公告)日：2003-12-23

申请号：US09327800

申请日：1999-06-08

申请人： Yoshihiko Morikawa ,  Kazunori Senbiki ,  Nobuhiro Yamazaki

发明人： Yoshihiko Morikawa ,  Kazunori Senbiki ,  Nobuhiro Yamazaki

IPC分类号： C09K1306

CPC分类号： B41N3/03 ,  C23F1/18 ,  H05K3/383 ,  H05K3/4611 ,  H05K2203/0796 ,  H05K2203/124

摘要： A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.

摘要翻译： 能够提供具有粗糙表面的铜的铜表面的粗糙化的液体蚀刻剂和粗糙化方法在短时间内与氯离子无关地增加耐酸性，从而确保铜导电图案和外层之间的牢固粘合 在制造印刷电路板期间的材料，导致制造被高度简化。 液体蚀刻剂包括含有氧酸如硫酸和过氧化氢如过氧化氢的主要成分。 此外，液体蚀刻剂包括含有四唑的辅助成分，例如5-氨基四唑等，或1,2,3,4-唑。 液体蚀刻剂允许铜表面以针状方式粗糙化。

公开(公告)号：US06544436B2

公开(公告)日：2003-04-08

申请号：US08901700

申请日：1997-07-28

申请人： Yoshihiko Morikawa ,  Kazunori Senbiki ,  Nobuhiro Yamazaki

发明人： Yoshihiko Morikawa ,  Kazunori Senbiki ,  Nobuhiro Yamazaki

IPC分类号： C09K1306

CPC分类号： H05K3/383 ,  C23F1/18 ,  H05K3/4611 ,  H05K2203/0796 ,  H05K2203/124

摘要： An etchant and a method for roughening a copper surface each capable of permitting copper with roughened surface which exhibits acid resistance and permits a copper conductive pattern and an outer layer material to be firmly bonded to each other therethrough in manufacturing of a printed wiring board to simplify the manufacturing. The etchant may contain an oxo acid such as sulfuric acid, peroxide such as hydrogen peroxide and an auxiliary component such as an azole and chlorine. The azole may comprise benzotriazole (BTA). The chlorine may be in the form of sodium chloride (NaCl). The etchant permits a copper surface to be roughened in an acicular manner.

公开(公告)号：US06174454B1

公开(公告)日：2001-01-16

申请号：US09239664

申请日：1999-01-29

申请人： Ming-Shih Tsai ,  Shih-Tzung Chang ,  Bau-Tong Dai ,  Ying-Lang Wang

发明人： Ming-Shih Tsai ,  Shih-Tzung Chang ,  Bau-Tong Dai ,  Ying-Lang Wang

IPC分类号： C09K1306

CPC分类号： C03C15/02 ,  C03C19/00 ,  F28D9/0043 ,  F28D21/0003 ,  F28F3/02 ,  F28F3/025 ,  F28F9/0268 ,  F28F2265/26 ,  H01L21/31053 ,  H01L21/3122 ,  Y10T29/49366 ,  Y10T29/49393

摘要： Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.

摘要翻译： 开发有机添加的低SOG电介质的浆料配方或CMP。 使用具有各种添加剂的二氧化硅和氧化锆基浆料对具有各种有机含量的SOG层进行抛光实验。 结果表明，随着SOG中有机物含量的增加，CMP抛光速率随着添加二氧化硅的KOH添加而降低。 另一方面，氧化锆基浆料可以导致SOG（> 400nm / min）和热氧化物的更高的pl丝率。 通过在氢氧化铵中加入不同量的四烷基可以实现1.2至9.1的波长选择性。