发明授权
- 专利标题： Method of forming capacitor with a HSG layer
- 专利标题（中）： 用HSG层形成电容器的方法
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申请号： US09165143申请日： 1998-10-01
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公开(公告)号： US06180451B2公开(公告)日： 2001-01-30
- 发明人: Wen-Yi Hsieh , Juan-Yuan Wu , Water Lur
- 申请人： Wen-Yi Hsieh , Juan-Yuan Wu , Water Lur
- 优先权： TW87110435 19980629
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A method of forming a DRAM capacitor. A hemispherical grain structure is formed on the surface of the bottom electrode of the capacitor. By employing an additional annealing under a dopant contained ambient, the dopant is diffused into the hemispherical grain structure and distributed at the surface area of the hemispherical grain region.
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