发明授权
- 专利标题: Method for preparing dense, epitaxial metal oxide film
- 专利标题(中): 制备密集的外延金属氧化物膜的方法
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申请号: US09272564申请日: 1999-03-19
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公开(公告)号: US06183554B2公开(公告)日: 2001-02-06
- 发明人: Susumu Mizuta , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Wakichi Kondo , Tadao Shimizu , Tsuyoshi Terayama
- 申请人: Susumu Mizuta , Iwao Yamaguchi , Toshiya Kumagai , Takaaki Manabe , Wakichi Kondo , Tadao Shimizu , Tsuyoshi Terayama
- 优先权: JP10-290577 19981013
- 主分类号: C30B702
- IPC分类号: C30B702
摘要:
A process for forming a dense, epitaxial metal oxide film on a single crystal substrate, including cleaning the surface of the single crystal substrate, contacting the cleaned surface with a polar organic compound such as a small molecular weight alcohol, so that the cleaned surface adsorbs the polar organic compound, then applying a hydrocarbon solvent solution containing at least one organic group-containing metal compound on the polar organic compound-adsorbed surface, and then heating the substrate to decompose the organic group-containing metal compound and to form a dense epitaxial metal oxide film on the substrate.
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