发明授权
- 专利标题: Nitride compound semiconductor laser and its manufacturing method
- 专利标题(中): 氮化物半导体激光器及其制造方法
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申请号: US09026913申请日: 1998-02-20
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公开(公告)号: US06185238B2公开(公告)日: 2001-02-06
- 发明人: Masaaki Onomura , Genichi Hatakoshi , Shinya Nunoue , Masayuki Ishikawa
- 申请人: Masaaki Onomura , Genichi Hatakoshi , Shinya Nunoue , Masayuki Ishikawa
- 优先权: JP9-037289 19970221
- 主分类号: H01S319
- IPC分类号: H01S319
摘要:
In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.
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