公开(公告)号：US06400742B1

公开(公告)日：2002-06-04

申请号：US09498372

申请日：2000-02-04

申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。

公开(公告)号：US06185238B2

公开(公告)日：2001-02-06

申请号：US09026913

申请日：1998-02-20

申请人： Masaaki Onomura ,  Genichi Hatakoshi ,  Shinya Nunoue ,  Masayuki Ishikawa

发明人： Masaaki Onomura ,  Genichi Hatakoshi ,  Shinya Nunoue ,  Masayuki Ishikawa

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2213 ,  H01S5/2219 ,  H01S5/3211 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.

摘要翻译： 在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层 侧电极。 激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。

公开(公告)号：US6031858A

公开(公告)日：2000-02-29

申请号：US925764

申请日：1997-09-09

申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

IPC分类号： H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01S5/32

CPC分类号： H01S5/32341 ,  H01S2301/166 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087

摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

公开(公告)号：US06252894B1

公开(公告)日：2001-06-26

申请号：US09263213

申请日：1999-03-05

申请人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

发明人： Katsunobu Sasanuma ,  Shinji Saito ,  Genichi Hatakoshi ,  Kazuhiko Itaya ,  Masaaki Onomura ,  Risa Sugiura ,  Mikio Nakasuji ,  Hidetoshi Fujimoto ,  Masahiro Yamamoto ,  Shinya Nunoue

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/205 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/2231 ,  H01S2301/18

摘要： A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

摘要翻译： 半导体激光器由氮化镓系化合物半导体形成，具有包含保持在p型和n型AlGaN覆盖层之间的MQW（多量子阱）有源层的双异质结构。 双异质结构保持在p型和n型接触层之间。 在至少一个接触层和InAlGaN光学引导模式控制中形成具有大于具有与接触层相同的导电类型并且与接触层相邻的覆盖层的光吸收系数的InGaN光吸收层 在光吸收层的外部形成折射率小于包层的层（小折射率层）。

公开(公告)号：US5488233A

公开(公告)日：1996-01-30

申请号：US208850

申请日：1994-03-11

申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Shinji Saito ,  Peter J. Parbrook ,  Masaaki Onomura ,  Koichi Nitta ,  Genichi Hatakoshi

IPC分类号： H01L33/00 ,  H01L33/28 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S5/347

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01S5/347 ,  H01S5/209 ,  H01S5/2238 ,  H01S5/3077

摘要： This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.

摘要翻译： 本发明提供了一种半导体发光器件，其包括由周期表的第三和第五组中的元件的化合物半导体构成的半导体衬底，直接形成在半导体衬底的至少一部分上并由 至少含有In和P的化合物半导体和直接形成在第一化合物半导体层上并由元素周期表的第二和第六组元素的化合物半导体构成的第二化合物半导体。 通过这种布置，可以充分地防止半导体衬底与由周期表的第二组和第六组中的元件的化合物半导体组成的第二化合物半导体层之间的界面中的缺陷的发生。

公开(公告)号：US5780873A

公开(公告)日：1998-07-14

申请号：US689689

申请日：1996-08-13

申请人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

发明人： Kazuhiko Itaya ,  Masahiro Yamamoto ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Genichi Hatakoshi ,  Hideto Sugawara ,  Masayuki Ishikawa ,  John Rennie ,  Shinji Saito

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0215 ,  H01S5/34333 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3202 ,  H01S5/32391 ,  H01S5/34326 ,  H01S5/4043 ,  H01S5/4087

摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.

摘要翻译： 半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。 立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

公开(公告)号：US5585649A

公开(公告)日：1996-12-17

申请号：US404287

申请日：1995-03-14

申请人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter J. Parbrook ,  Genichi Hatakoshi

发明人： Masayuki Ishikawa ,  Yukie Nishikawa ,  Masaaki Onomura ,  Shinji Saito ,  Peter J. Parbrook ,  Genichi Hatakoshi

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327 ,  H01L33/00

CPC分类号： H01S5/327 ,  H01L33/145 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40 ,  H01S5/2211 ,  H01S5/2231

摘要： A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.

摘要翻译： 具有改善的内部电流阻挡结构的化合物半导体器件。 该半导体器件包括II-VI族化合物半导体的n覆盖层，II-VI族化合物半导体的p覆盖层，n型覆层和p型覆层之间的II-VI族化合物半导体的有源层， 在p覆盖层上提供n型II-VI族化合物半导体的薄电流阻挡层，并且在p覆盖层上提供开口，p型II-VI化合物半导体的p接触层和当前阻挡层 开口和p接触层上的p侧电极。

公开(公告)号：US6118801A

公开(公告)日：2000-09-12

申请号：US373624

申请日：1999-08-13

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.

摘要翻译： 氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。 在p-包层上形成具有条纹开口部分的GaN电流阻挡层。 形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。 有源层具有通过循环堆叠具有不同带隙并且为10nm以上厚度的两种类型的InGaAlN层形成的循环结构构成的多量子阱结构。

公开(公告)号：US5966396A

公开(公告)日：1999-10-12

申请号：US900127

申请日：1997-07-25

申请人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

发明人： Haruhiko Okazaki ,  Hidetoshi Fujimoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Genichi Hatakoshi ,  Masahiro Yamamoto

IPC分类号： H01S5/042 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32325 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/32341

摘要： A semiconductor laser is formed from a gallium nitride-based compound semiconductor material, and has a double-heterostructure portion obtained by sandwiching an active layer between an n-type cladding layer and a p-type cladding layer on a sapphire substrate. The double-heterostructure portion is formed into a mesa shape on the sapphire substrate via a GaN buffer layer. The two sides of this mesa structure are buried with GaN current blocking layers.

摘要翻译： 半导体激光器由氮化镓系化合物半导体材料形成，并且具有通过在蓝宝石衬底上的n型覆层和p型覆层之间夹持有源层而获得的双异质结构部。 双异质结构部分经由GaN缓冲层在蓝宝石衬底上形成台面形状。 这种台面结构的两面被GaN电流阻挡层掩埋。

公开(公告)号：US6121634A

公开(公告)日：2000-09-19

申请号：US27490

申请日：1998-02-20

申请人： Shinji Saito ,  Genichi Hatakoshi ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Norio Iizuka ,  Chiharu Nozaki ,  Johji Nishio ,  Masayuki Ishikawa

发明人： Shinji Saito ,  Genichi Hatakoshi ,  Masaaki Onomura ,  Hidetoshi Fujimoto ,  Norio Iizuka ,  Chiharu Nozaki ,  Johji Nishio ,  Masayuki Ishikawa

IPC分类号： H01L33/02 ,  H01L33/32 ,  H01S5/343 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/025 ,  H01S5/34333

摘要： In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.

摘要翻译： 在氮化物化合物半导体发光器件中，将In0.3Ga0.7N / GaN多量子阱有源层105或In0.1Ga0.9N / GaN多量子阱相邻层104制成为可饱和吸收区域，使得自身 脉搏发生在那里。 因此，该装置以简单的结构以高概率确保自脉动，并且满足用作从光盘读取数据的光学头的要求。