Invention Grant
US06188606B1 Multi state sensing of NAND memory cells by varying source bias
有权
通过改变源偏置来对NAND存储器单元进行多状态感测
- Patent Title: Multi state sensing of NAND memory cells by varying source bias
- Patent Title (中): 通过改变源偏置来对NAND存储器单元进行多状态感测
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Application No.: US09369600Application Date: 1999-08-06
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Publication No.: US06188606B1Publication Date: 2001-02-13
- Inventor: Narbeh Derhacobian , Hao Fang , Michael Han
- Applicant: Narbeh Derhacobian , Hao Fang , Michael Han
- Main IPC: G11C1604
- IPC: G11C1604
Abstract:
A method and circuit for sensing multi states of a NAND memory cell by varying source bias, at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the source bias, and sensing the memory cell state.
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