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公开(公告)号：US20180219936A1
公开(公告)日：2018-08-02
申请号：US15940379
申请日：2018-03-29
申请人： Alexei R. White , Mitchell Cohen , Michael Han , Ho Yan Leung
发明人： Alexei R. White , Mitchell Cohen , Michael Han , Ho Yan Leung
IPC分类号： H04L29/08
CPC分类号： H04L67/04 , H04L67/22 , H04M1/72522 , H04M2250/10 , H04M2250/12
摘要： Systems and methods for capturing interaction data relating to a host application (app) implemented on a mobile device are disclosed. A tracking module is embedded in the host application. Interaction data relating to the host application is captured on the mobile device with the tracking module. The captured interaction data is transmitted from the mobile device.
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2.发明授权Multi state sensing of NAND memory cells by applying reverse-bias voltage 有权通过施加反向偏置电压对NAND存储单元进行多状态感测
公开(公告)号：US6166951A
公开(公告)日：2000-12-26
申请号：US370010
申请日：1999-08-06
申请人： Narbeh Derhacobian , Hao Fang , Michael Han
发明人： Narbeh Derhacobian , Hao Fang , Michael Han
CPC分类号： G11C16/0483 , G11C11/5621 , G11C11/5642 , G11C16/26 , G11C2211/5642
摘要： A method and circuit for sensing multi states of a NAND memory cell by applying reverse bias voltage at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the applied reverse P well bias, and sensing the memory cell state.
摘要翻译： 一种用于通过以恒定栅极电压（优选为零伏特）施加反向偏置电压来感测NAND存储器单元的多种状态的方法和电路，响应于所施加的反向P阱偏置而产生存储单元电流，以及感测存储单元状态。
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公开(公告)号：US20120110456A1
公开(公告)日：2012-05-03
申请号：US12917461
申请日：2010-11-01
IPC分类号： G06F3/16
CPC分类号： G06F3/167
摘要： A system and method are disclosed for providing a NUI system including a speech reveal mode where visual objects on a display having an associated voice command are highlighted. This allows a user to quickly and easily identify available voice commands, and also enhances an ability of a user to learn voice commands as there is a direct association between an object and its availability as a voice command.
摘要翻译： 公开了一种用于提供包括语音显示模式的NUI系统的系统和方法，其中具有相关联的语音命令的显示器上的可视对象被突出显示。 这允许用户快速且容易地识别可用的语音命令，并且还增强了用户学习语音命令的能力，因为对象与其作为语音命令的可用性之间存在直接关联。
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公开(公告)号：US06327183B1
公开(公告)日：2001-12-04
申请号：US09480868
申请日：2000-01-10
IPC分类号： G11C700
CPC分类号： G11C5/147 , G11C16/12 , G11C16/3468
摘要： A voltage control circuit that narrows the distribution of threshold voltages of memory cells by using nonlinearly incremented programming voltages. To do so, the voltage control circuit applies to the memory cells a first program pulse of a first voltage, a second program pulse of a second voltage to the memory cell, and a third program pulse of a third voltage, where the difference between the third voltage and the second voltage is less than the difference between the second voltage and the first voltage.
摘要翻译： 一种电压控制电路，其通过使用非线性递增的编程电压来缩小存储器单元的阈值电压的分布。 为此，电压控制电路向存储器单元施加第一电压的第一编程脉冲，到存储单元的第二电压的第二编程脉冲和第三电压的第三编程脉冲， 第三电压，第二电压小于第二电压和第一电压之间的差。
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5.发明授权公开(公告)号：US06188606B1
公开(公告)日：2001-02-13
申请号：US09369600
申请日：1999-08-06
申请人： Narbeh Derhacobian , Hao Fang , Michael Han
发明人： Narbeh Derhacobian , Hao Fang , Michael Han
IPC分类号： G11C1604
CPC分类号： G11C16/0483 , G11C11/5621 , G11C11/5642
摘要： A method and circuit for sensing multi states of a NAND memory cell by varying source bias, at a constant gate voltage, preferably zero volts, generating a memory cell current in response to the source bias, and sensing the memory cell state.
摘要翻译： 一种用于通过在恒定栅极电压（优选为零伏特）下改变源偏置来感测NAND存储器单元的多状态的方法和电路，响应于源极偏置产生存储单元电流，并感测存储单元状态。
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公开(公告)号：US07095076B1
公开(公告)日：2006-08-22
申请号：US10897185
申请日：2004-07-21
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/115 , H01L27/11558
摘要： A method, apparatus, and system in which an embedded memory comprises one or more electrically-alterable non-volatile memory cells that include a coupling capacitor, a read transistor, and a tunneling capacitor. The coupling capacitor has a first gate composed of both N+ doped material and P+ doped material, and a P+ doped region abutted to a N+ doped region. The P+ doped region abutted to the N+ doped region surrounds the first gate. The read transistor has a second gate. The tunneling capacitor has a third gate composed of both N+ doped material and P+ doped material.
摘要翻译： 一种方法，装置和系统，其中嵌入式存储器包括一个或多个包括耦合电容器，读取晶体管和隧道电容器的可电气可变的非易失性存储器单元。 耦合电容器具有由N +掺杂材料和P +掺杂材料构成的第一栅极和与N +掺杂区域邻接的P +掺杂区域。 邻接N +掺杂区域的P +掺杂区围绕第一栅极。 读取晶体管具有第二栅极。 隧道电容器具有由N +掺杂材料和P +掺杂材料构成的第三栅极。
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公开(公告)号：US06788574B1
公开(公告)日：2004-09-07
申请号：US10295742
申请日：2002-11-15
IPC分类号： G11C1400
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/115 , H01L27/11558
摘要： A method, apparatus, and system in which an embedded memory comprises one or more electrically-alterable non-volatile memory cells that include a coupling capacitor, a read transistor, and a tunneling capacitor. The coupling capacitor has a first gate composed of both N+ doped material and P+ doped material, and a P+ doped region abutted to a N+ doped region. The P+ doped region abutted to the N+ doped region surrounds the first gate. The read transistor has a second gate. The tunneling capacitor has a third gate composed of both N+ doped material and P+ doped material.
摘要翻译： 一种方法，装置和系统，其中嵌入式存储器包括一个或多个包括耦合电容器，读取晶体管和隧道电容器的可电气可变的非易失性存储器单元。 耦合电容器具有由N +掺杂材料和P +掺杂材料构成的第一栅极和与N +掺杂区域邻接的P +掺杂区域。 邻接N +掺杂区域的P +掺杂区围绕第一栅极。 读取晶体管具有第二栅极。 隧道电容器具有由N +掺杂材料和P +掺杂材料构成的第三栅极。
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公开(公告)号：US06529410B1
公开(公告)日：2003-03-04
申请号：US09665916
申请日：2000-09-20
申请人： Michael Han , Narbeh Derhacobian
发明人： Michael Han , Narbeh Derhacobian
IPC分类号： G11C1604
CPC分类号： G11C16/0483 , H01L27/115
摘要： An efficient NAND array structure includes memory cells coupled in series between a bit-line and a select source transistor, without a select drain transistor. The memory cells each include a floating gate transistor, having a control gate connected to a word-line, which selects the memory cell during its programming. In one embodiment, the NAND array structure includes a buried layer at a junction between the substrate and a well in which the memory cells are formed. Programming is achieved using hot electron injection. In one embodiment, multiple memory cells are programmed simultaneously.
摘要翻译： 有效的NAND阵列结构包括串联耦合在位线和选择源晶体管之间的存储单元，而没有选择漏极晶体管。 每个存储单元都包括一个具有连接到字线的控制栅极的浮栅晶体管，其在编程期间选择该存储单元。 在一个实施例中，NAND阵列结构包括在衬底与其中形成存储器单元的阱之间的接合处的掩埋层。 使用热电子注入实现编程。 在一个实施例中，多个存储器单元被同时编程。
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公开(公告)号：US20190220886A1
公开(公告)日：2019-07-18
申请号：US15870042
申请日：2018-01-12
申请人： Minh-Michael Van Le , Michael Han
发明人： Minh-Michael Van Le , Michael Han
IPC分类号： G06Q30/02
CPC分类号： G06Q30/0239 , G06Q20/0658 , G06Q30/0277 , H04L63/06
摘要： A computerized process can be used to create and distribute a durable coupon token redeemable with a company agreeing to permit a user redeem the durable coupon token for a discount. The process includes, within a computerized processor, operating programming configured to create the durable coupon token. The durable coupon token includes a digital security key associated with the durable coupon token configured to provide transferrable ownership of the durable coupon token. The process further includes distributing the durable coupon token to a consumer. The durable coupon token is configured to enable the consumer to claim the discount with the company.
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公开(公告)号：US20110093466A1
公开(公告)日：2011-04-21
申请号：US12973068
申请日：2010-12-20
IPC分类号： G06F17/30
CPC分类号： G06F16/489 , G06F16/487
摘要： Event clusters are create based on a first metadata and second metadata of the electronic document. The event clusters are associated with an event id and each electronic document is associated with the event identifier of its corresponding event cluster. A user may then browse or otherwise access the electronic documents based on the event identifier.
摘要翻译： 事件集群是基于电子文档的第一元数据和第二元数据创建的。 事件集群与事件ID相关联，并且每个电子文档与其对应的事件集群的事件标识符相关联。 然后，用户可以基于事件标识符浏览或以其他方式访问电子文档。
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