发明授权
- 专利标题: Data output circuits for semiconductor memory devices
- 专利标题(中): 半导体存储器件的数据输出电路
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申请号: US09398828申请日: 1999-09-17
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公开(公告)号: US06188640B1公开(公告)日: 2001-02-13
- 发明人: Tadao Aikawa , Yasuharu Sato , Hiroyuki Kobayashi , Waichirou Fujieda
- 申请人: Tadao Aikawa , Yasuharu Sato , Hiroyuki Kobayashi , Waichirou Fujieda
- 优先权: JP10-265219 19980918
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A data output circuit for a semiconductor memory device, such as a synchronous DRAM (SDRAM) includes an output control circuit that acquires a command in sync with an input internal clock signal and generates an output control signal used to determine the output timing of a data signal. An output buffer receives the output control signal and then outputs the data signal in accordance with an output internal clock signal. The phase of the output internal clock signal is advanced from that of the input internal clock signal. The output control circuit also includes a latency counter that generates the output control signal by counting the cycles of a second output internal clock signal, which is delayed from the first output internal clock signal.
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