发明授权
US06194752B1 Dielectric device, dielectric memory and method of fabricating the same
失效
电介质器件，介质存储器及其制造方法
- 专利标题： Dielectric device, dielectric memory and method of fabricating the same
- 专利标题（中）： 电介质器件，介质存储器及其制造方法
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申请号： US09094592申请日： 1998-06-15
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公开(公告)号： US06194752B1公开(公告)日： 2001-02-27
- 发明人: Satoru Ogasahara , Mitsuaki Harada , Hiroaki Furukawa , Takashi Goto , Tatsuro Gueshi , Yoshiyuki Ishizuka
- 申请人： Satoru Ogasahara , Mitsuaki Harada , Hiroaki Furukawa , Takashi Goto , Tatsuro Gueshi , Yoshiyuki Ishizuka
- 优先权： JP9-158809 19970616
- 主分类号： H01L2972
- IPC分类号： H01L2972
摘要：
A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the first lower electrode and the gate insulating film. A buffer layer is formed on the interlayer insulating film, and a contact hole is formed in the interlayer insulating film and the buffer layer on the first lower electrode. A connecting layer and a second lower electrode are formed in the contact hole. A ferroelectric thin film and an upper electrode are formed in this order on the buffer layer so as to be brought into contact with the upper surface of the second lower electrode.
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