发明授权
- 专利标题： Magnetoresistance effect film and magnetoresistance effect type head
- 专利标题（中）： 磁阻效应膜和磁阻效应型头
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申请号： US09260727申请日： 1999-03-02
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公开(公告)号： US06195239B1公开(公告)日： 2001-02-27
- 发明人: Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
- 申请人： Satoru Araki , Masashi Sano , Yoshihiro Tsuchiya
- 优先权： JP10-073175 19980306
- 主分类号： G11B533
- IPC分类号： G11B533
摘要：
In a spin valve type magnetoresistance effect film, an antiferromagnetic layer is made of MxMn100−x wherein M represents at least one selected from Ru, Rh, Re, Pt, Pd, Au, Ag, Fe, Ni, Ir and Cr, and 15≦x≦58 (unit of x: atomic %), and a protective layer formed thereon is made of at least one selected from Rh, Ru, Zr and Ti. With this arrangement, a magnetoresistance effect film highly excellent in thermal stability and small in deterioration of the MR ratio, as well as a magnetoresistance effect type head having such a magnetoresistance effect film can be obtained.
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