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37 条记录 (耗时 0.016 秒)

    Magnetic head
    1.
    发明授权
    Magnetic head 失效
    磁头

    公开(公告)号：US06795263B2

    公开(公告)日：2004-09-21

    申请号：US10262121

    申请日：2002-10-01

    申请人： Akio Kuroe ,  Sayuri Muramatsu ,  Hirotsugu Fusayasu ,  Akio Murata

    发明人： Akio Kuroe ,  Sayuri Muramatsu ,  Hirotsugu Fusayasu ,  Akio Murata

    IPC分类号： G11B533

    CPC分类号： G11B5/332

    摘要： In a high-frequency impedance type magnetic head having high impedance and capable of efficiently detecting a change in impedance, an electrically conductive metal film is sandwiched between two soft magnetic films, and the two soft magnetic films form a portion of a magnetic path. The thickness of one soft magnetic film is smaller than the thickness of the other soft magnetic film. The electrically conductive metal thin film has a pair of electrodes at respective ends thereof, to which are connected an oscillator for applying a high frequency carrier signal to the electrodes and a high frequency amplifier having a demodulator circuit. Further, an electrically conductive metal film winding is provided, and a DC current is applied to the electrically conductive metal film winding at the time of reproduction, while on the other hand, a signal current is applied to the electrically conductive metal film winding at the time of recording.

    摘要翻译： 在具有高阻抗且能够有效地检测阻抗变化的高频阻抗型磁头中，导电金属膜被夹在两个软磁膜之间，并且两个软磁膜形成磁路的一部分。 一个软磁膜的厚度小于另一软磁膜的厚度。 导电性金属薄膜的各自的端部具有一对电极，连接有用于向电极施加高频载波信号的振荡器和具有解调电路的高频放大器。 此外，提供导电金属膜绕组，并且在再现时将DC电流施加到导电金属膜绕组，而另一方面，信号电流施加到导电金属膜绕组上的导电金属膜绕组 录音时间

    Diamond-like carbon and oxide bilayer insulator for magnetoresistive transducers
    2.
    发明授权
    Diamond-like carbon and oxide bilayer insulator for magnetoresistive transducers 失效
    用于磁阻换能器的类金刚石碳和氧化物双层绝缘体

    公开(公告)号：US06215630B1

    公开(公告)日：2001-04-10

    申请号：US08741277

    申请日：1996-10-30

    申请人： Allan E. Schultz ,  L. Vincent Ruscello ,  William H. Nunne

    发明人： Allan E. Schultz ,  L. Vincent Ruscello ,  William H. Nunne

    IPC分类号： G11B533

    CPC分类号： G11B5/3906 ,  G11B5/3163 ,  G11B5/3903 ,  H01F41/34 ,  Y10T409/303752

    摘要： A magnetic structure is formed by depositing a layer of diamond-like carbon onto the exposed surface of an a first material and depositing a layer of second material onto the layer of diamond-like carbon. A photoresist is applied to the exposed surface of the second layer and is patterned in the form of the desire structure. The exposed portions of the second layer are removed with a wet etchant that does not attack the diamond-like carbon layer. Thereafter, any remaining photoresist is removed.

    摘要翻译： 通过在第一材料的暴露表面上沉积一层类金刚石碳并将一层第二材料沉积到类金刚石碳层上形成磁性结构。 将光致抗蚀剂施加到第二层的暴露表面，并以期望结构的形式进行图案化。 用不侵蚀类金刚石碳层的湿蚀刻剂去除第二层的暴露部分。 此后，除去任何剩余的光致抗蚀剂。

    Magnetoresistance effect film and magnetoresistance effect type head
    3.
    发明授权
    Magnetoresistance effect film and magnetoresistance effect type head 有权
    磁阻效应膜和磁阻效应型头

    公开(公告)号：US06195239B1

    公开(公告)日：2001-02-27

    申请号：US09260727

    申请日：1999-03-02

    申请人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

    发明人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

    IPC分类号： G11B533

    CPC分类号： G11B5/3967

    摘要： In a spin valve type magnetoresistance effect film, an antiferromagnetic layer is made of MxMn100−x wherein M represents at least one selected from Ru, Rh, Re, Pt, Pd, Au, Ag, Fe, Ni, Ir and Cr, and 15≦x≦58 (unit of x: atomic %), and a protective layer formed thereon is made of at least one selected from Rh, Ru, Zr and Ti. With this arrangement, a magnetoresistance effect film highly excellent in thermal stability and small in deterioration of the MR ratio, as well as a magnetoresistance effect type head having such a magnetoresistance effect film can be obtained.

    摘要翻译： 在自旋阀型磁阻效应膜中，反铁磁层由MxMn100-x制成，其中M表示选自Ru，Rh，Re，Pt，Pd，Au，Ag，Fe，Ni，Ir和Cr中的至少一种， <= x <= 58（x：原子％），其上形成的保护层由选自Rh，Ru，Zr和Ti中的至少一种制成。 通过这种布置，可以获得热稳定性优异且MR比率劣化小的磁阻效应膜以及具有这种磁阻效应膜的磁阻效应型头。

    Thin film MR head and method of making wherein pole trim takes place at the wafer level
    4.
    发明授权
    Thin film MR head and method of making wherein pole trim takes place at the wafer level 有权
    薄膜MR磁头及其制造方法，其中磁极修整发生在晶片级

    公开(公告)号：US06195229B1

    公开(公告)日：2001-02-27

    申请号：US09385844

    申请日：1999-08-30

    申请人： Yong Shen ,  Bertha Higa-Baral ,  Lien-Chang Wang

    发明人： Yong Shen ,  Bertha Higa-Baral ,  Lien-Chang Wang

    IPC分类号： G11B533

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49046

    摘要： A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance. The width of the second shield layer allows the magnetoresistive element to be shielded.

    摘要翻译： 制造包括电感写入结构和磁阻传感器的薄膜合并磁头的方法使用图案化保护层来保护与电感写入结构的磁极末端隔开的区域中的第二屏蔽/底极层。 在保护层中设置一个窗口。 在制造时，该结构包括第一屏蔽层，磁阻元件，用作底极的第二屏蔽层，保护层，保护窗，写间隙，顶极和极尖结构。 使用保护层和窗口导致在与支撑感性写入结构的基座相邻的第二屏蔽层中形成通道。 通道防止磁通量向第二屏蔽层延伸超过极端结构的宽度。 这种结构减少了侧面写入，从而改善了非轨道性能。 第二屏蔽层的宽度允许屏蔽磁阻元件。

    Overlaid lead giant magnetoresistive head with side reading reduction
    8.
    发明授权
    Overlaid lead giant magnetoresistive head with side reading reduction 失效
    覆盖铅巨磁阻头，侧读数减少

    公开(公告)号：US06785101B2

    公开(公告)日：2004-08-31

    申请号：US09905522

    申请日：2001-07-12

    申请人： Patrick Rush Webb ,  Mustafa Pinarbasi ,  Richard Hsiao ,  Hardayal Singh Gill

    发明人： Patrick Rush Webb ,  Mustafa Pinarbasi ,  Richard Hsiao ,  Hardayal Singh Gill

    IPC分类号： G11B533

    CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/398

    摘要： The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of the sensor beyond the track width region thereby minimizing side reading by the sensor. The first and second notches of the spin valve sensor are then filled with layers in various embodiments of the invention to complete the spin valve sensor.

    摘要翻译： 底部自旋阀传感器或顶部自旋阀传感器的第一和第二侧表面被切口，以便能够将传感器的侧部的磁阻系数降低到轨道宽度区域之外，从而最小化传感器的侧面读数。 然后，在本发明的各种实施例中，自旋阀传感器的第一和第二缺口填充层以完成自旋阀传感器。

    Magnetoresistive sensor with laminate electrical interconnect
    9.
    发明授权
    Magnetoresistive sensor with laminate electrical interconnect 有权
    具有叠层电气互连的磁阻传感器

    公开(公告)号：US06683761B2

    公开(公告)日：2004-01-27

    申请号：US09981765

    申请日：2001-10-17

    申请人： Eric W. Singleton ,  Kristin J. Duxstad ,  Paul E. Anderson

    发明人： Eric W. Singleton ,  Kristin J. Duxstad ,  Paul E. Anderson

    IPC分类号： G11B533

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F41/307 ,  H01F41/325

    摘要： An electrical interconnect is configured to provide an electrical connection between a first point and a second point. The interconnect includes a specular reflection layer adjacent a conductor layer. The conductor is configured to conduct electrons between the first and second points and the planar specular reflection layer confines the electrons to the conductor through specular reflection. This reduces electrical resistance of the electrical interconnect measured in a direction parallel with the specular reflection layer.

    摘要翻译： 电互连被配置为提供第一点和第二点之间的电连接。 互连包括邻近导体层的镜面反射层。 导体被配置为在第一和第二点之间传导电子，并且平面镜面反射层通过镜面反射将电子限制在导体上。 这降低了在与镜面反射层平行的方向上测量的电互连的电阻。

    Dual/differential GMR head with a single AFM layer
    10.
    发明授权
    Dual/differential GMR head with a single AFM layer 失效
    双/差分GMR头与单个AFM层

    公开(公告)号：US06667861B2

    公开(公告)日：2003-12-23

    申请号：US09906659

    申请日：2001-07-16

    申请人： Hardayal Singh Gill

    发明人： Hardayal Singh Gill

    IPC分类号： G11B533

    CPC分类号： B82Y10/00 ,  G11B5/012 ,  G11B5/02 ,  G11B5/3903 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/0029

    摘要： A dual/differential spin valve (SV) sensor is provided with a single antiferromagnetic (AFM) layer sandwiched bewteen a first spin valve (SV) structure with an antiparallel (AP)-pinned layer and a second SV structure with a simple pinned layer. Having an AP-pinned layer for the first SV structure and a simple pinned layer for the second SV structure leads to a 180° phase difference in the response of the two SV structures. By arranging the bit transition length to be equal to the spacing between the free layers of the two SV structures, the signals generated by the two SV sensors are additive for both longitudinal and perpendicular recording applications.

    摘要翻译： 双/微分自旋阀（SV）传感器设置有单反铁磁（AFM）层，其夹在具有反平行（AP） - 带的层的第一自旋阀（SV）结构和具有简单的钉扎层的第二SV结构。 具有用于第一SV结构的AP钉扎层和用于第二SV结构的简单钉扎层导致两个SV结构的响应中的180°相位差。 通过将位转换长度设置为等于两个SV结构的自由层之间的间隔，由两个SV传感器产生的信号对于纵向和垂直记录应用都是相加的。