公开(公告)号：US06920022B1

公开(公告)日：2005-07-19

申请号：US09769760

申请日：2001-01-26

申请人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano ,  Takumi Uesugi

发明人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano ,  Takumi Uesugi

IPC分类号： G11B5/31 ,  G11B5/127 ,  G11B5/21 ,  G11B5/39 ,  H01F10/00 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01F41/18 ,  H01L43/08 ,  H01L43/12

CPC分类号： B82Y25/00 ,  G11B5/1276 ,  G11B5/21 ,  H01F10/3268

摘要： Provided are a magnetic transducer having good thermal stability, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack of an MR element has a stacked structure comprising an underlayer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a capping layer, which are stacked in this order on the underlayer. The ferromagnetic layer is divided into a bottom layer and a top layer in the direction of stack. A ferromagnetic interlayer having magnetism and having higher electrical resistance than the electrical resistance of the ferromagnetic layer is formed between the bottom layer and the top layer. The ferromagnetic interlayer magnetically integrates the bottom layer with the top layer and limits a path for electrons moving through the stack, thereby improving the rate of resistance change. Furthermore, the ferromagnetic interlayer contains, as an additive, at least one element in a group consisting of Mn, Cr, Ni, Cu, Rh, Ir and Pt and thus prevents heat deterioration in the stack.

摘要翻译： 提供具有良好热稳定性的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。 MR元件的堆叠具有堆叠结构，其包括下层，第一软磁层，第二软磁层，非磁性层，铁磁层，反铁磁层和覆盖层， 底层 铁磁层沿堆叠方向分为底层和顶层。 在底层和顶层之间形成具有磁性并且具有比铁磁层的电阻更高的电阻的铁磁中间层。 铁磁层将磁极层与顶层磁集成，限制电子移动通过堆叠的路径，从而提高电阻变化率。 此外，铁磁性中间层含有由Mn，Cr，Ni，Cu，Rh，Ir和Pt组成的组中的至少一种元素作为添加剂，从而防止堆叠中的热劣化。

公开(公告)号：US06646834B2

公开(公告)日：2003-11-11

申请号：US09904842

申请日：2001-07-16

申请人： Masashi Sano ,  Satoru Araki ,  Yoshihiro Tsuchiya ,  Takumi Uesugi

发明人： Masashi Sano ,  Satoru Araki ,  Yoshihiro Tsuchiya ,  Takumi Uesugi

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3268 ,  Y10T29/49044

摘要： Provided are a magnetic transducer and a thin film magnetic head having good thermal stability and capable of obtaining a high exchange coupling magnetic field, a method of manufacturing a magnetic transducer and a method of a manufacturing a thin film magnetic head. An MR element has a stack having a stacked structure comprising an underlayer, a crystal-growth inhibitor layer, a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a cap layer, which are stacked in sequence. The ferromagnetic layer has an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer, which are stacked in this order on the nonmagnetic layer. The crystal-growth inhibitor layer inhibits crystal growth of the layers formed on the crystal-growth inhibitor layer, thereby limiting an average in-surface particle diameter of the inner ferromagnetic layer to within the range of from 3 nm to 8 nm inclusive, so that an interface between the coupling layer and the inner ferromagnetic layer becomes flattened.

公开(公告)号：US06391431B1

公开(公告)日：2002-05-21

申请号：US09325394

申请日：1999-06-04

申请人： Masashi Sano ,  Yoshihiro Tsuchiya ,  Satoru Araki ,  Haruyuki Morita

发明人： Masashi Sano ,  Yoshihiro Tsuchiya ,  Satoru Araki ,  Haruyuki Morita

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/123 ,  H01F10/3268 ,  Y10T428/1143 ,  Y10T428/1157 ,  Y10T428/12861 ,  Y10T428/12944 ,  Y10T428/24975

摘要： A spin valve type magnetoresistance effect film comprises a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, and an antiferromagnetization promote layer formed on a surface of the antiferromagnetic layer remote from the other surface thereof abutting the ferromagnetic layer, wherein the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure the which requires a heat treatment for generating exchange coupling relative to the ferromagnetic layer, and the antiferromagnetic layer after the heat treatment has a state wherein (110) crystal surfaces are oriented on a film surface of the antiferromagnetic layer.

摘要翻译： 自旋阀型磁阻效应膜包括：包含非磁性金属层的多层膜，在非磁性金属层的一个表面上形成的铁磁层，形成在非磁性金属层的另一个表面上的软磁性层 形成在铁磁层的远离其另一表面的表面上的反铁磁性层，其与非磁性金属层邻接以引导铁磁层的磁化方向，以及形成在铁磁层的表面上的反铁磁化促进层 反铁磁层远离其另一表面邻接铁磁层，其中反铁磁层由含Mn的化合物制成并具有CuAu-I型规则晶体结构，其需要进行热处理以产生相对于铁磁层的交换耦合 ，热处理后的反铁磁层具有（110）晶面的状态 在反铁磁层的膜表面上取向。

公开(公告)号：US06195239B1

公开(公告)日：2001-02-27

申请号：US09260727

申请日：1999-03-02

申请人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

发明人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

IPC分类号： G11B533

CPC分类号： G11B5/3967

摘要： In a spin valve type magnetoresistance effect film, an antiferromagnetic layer is made of MxMn100−x wherein M represents at least one selected from Ru, Rh, Re, Pt, Pd, Au, Ag, Fe, Ni, Ir and Cr, and 15≦x≦58 (unit of x: atomic %), and a protective layer formed thereon is made of at least one selected from Rh, Ru, Zr and Ti. With this arrangement, a magnetoresistance effect film highly excellent in thermal stability and small in deterioration of the MR ratio, as well as a magnetoresistance effect type head having such a magnetoresistance effect film can be obtained.

摘要翻译： 在自旋阀型磁阻效应膜中，反铁磁层由MxMn100-x制成，其中M表示选自Ru，Rh，Re，Pt，Pd，Au，Ag，Fe，Ni，Ir和Cr中的至少一种， <= x <= 58（x：原子％），其上形成的保护层由选自Rh，Ru，Zr和Ti中的至少一种制成。 通过这种布置，可以获得热稳定性优异且MR比率劣化小的磁阻效应膜以及具有这种磁阻效应膜的磁阻效应型头。

公开(公告)号：US06661623B1

公开(公告)日：2003-12-09

申请号：US09425967

申请日：1999-10-25

申请人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano

发明人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

摘要： Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head. A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.

摘要翻译： 提供能够增加电阻变化并获得适当矫顽力的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。 叠层，自旋阀膜具有堆叠结构，其包括依次堆叠在下层上的第一软磁层，第二软磁层，非磁性金属层，铁磁层，反铁磁层和保护层。 电阻根据铁磁层的磁化取向与第一和第二软磁层的磁化方向之间的相对角度而改变。 在第一软磁性层中形成具有磁性的软磁性中间层和比第一软磁性层的电阻高的电阻。 当电流流过堆叠时，电子被软磁中间层的表面反射，因此电子的路径变窄。 因此，电阻变化率增加。

公开(公告)号：US07145756B2

公开(公告)日：2006-12-05

申请号：US10645901

申请日：2003-08-22

申请人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano

发明人： Yoshihiro Tsuchiya ,  Satoru Araki ,  Masashi Sano

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

摘要： Provided are a magnetic transducer capable of increasing a resistance change and obtaining an appropriate coercive force, a thin film magnetic head, a method of manufacturing a magnetic transducer and a method of manufacturing a thin film magnetic head.A stack, a spin valve film has a stacked structure comprising a first soft magnetic layer, a second soft magnetic layer, a nonmagnetic metal layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the first and second soft magnetic layers. A soft magnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the first soft magnetic layer is formed in the first soft magnetic layer. When a current flows through the stack, electrons are reflected by the surface of the soft magnetic interlayer and thus a path for the electrons is narrowed. Therefore, a rate of resistance change is increased.

摘要翻译： 提供能够增加电阻变化并获得适当矫顽力的磁换能器，薄膜磁头，制造磁换能器的方法和制造薄膜磁头的方法。 叠层，自旋阀膜具有堆叠结构，其包括依次层叠在下层上的第一软磁层，第二软磁层，非磁性金属层，铁磁层，反铁磁层和保护层。 电阻根据铁磁层的磁化取向与第一和第二软磁层的磁化方向之间的相对角度而改变。 在第一软磁性层中形成具有磁性的软磁性中间层和比第一软磁性层的电阻高的电阻。 当电流流过堆叠时，电子被软磁中间层的表面反射，因此电子的路径变窄。 因此，电阻变化率增加。

公开(公告)号：US06639763B1

公开(公告)日：2003-10-28

申请号：US09663387

申请日：2000-09-15

申请人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

发明人： Satoru Araki ,  Masashi Sano ,  Yoshihiro Tsuchiya

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996

摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head having resistance properties adaptable to ultra-high-density recording. An MR element, the magnetic transducer, has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. The stack has a first region and a second region into which the stack is divided in the direction of stacking thereof. The first and second regions of the stack differ from each other in the material or composition of the magnetic layers. The MR element has the above-described structure, thereby being capable of obtaining high resistance and a high rate of resistance change.

摘要翻译： 本发明的目的是提供一种具有适用于超高密度记录的电阻特性的磁换能器和薄膜磁头。 MR元件，磁换能器，具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。 堆叠具有第一区域和第二区域，堆叠体沿其堆叠方向被分割成第一区域和第二区域。 堆叠的第一和第二区域在磁性层的材料或组成上彼此不同。 MR元件具有上述结构，从而能够获得高电阻和高电阻变化率。

公开(公告)号：US06636393B1

公开(公告)日：2003-10-21

申请号：US09425200

申请日：1999-10-22

申请人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

发明人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268

摘要： A magnetic transducer and a thin film magnetic head capable of increasing a resistance change are provided. A spin valve film has a stacked structure comprising a soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, an antiferromagnetic layer and a protective layer which are stacked in sequence on an underlying layer. Electrical resistance is changed in accordance with a relative angle between the orientation of magnetization of the ferromagnetic layer and the orientation of magnetization of the soft magnetic layer. The ferromagnetic layer includes an inner ferromagnetic layer, a coupling layer and an outer ferromagnetic layer. The inner ferromagnetic layer and the outer ferromagnetic layer are magnetically coupled to each other sandwiching the coupling layer, whereby the magnetizations oriented in opposite directions are generated. A ferromagnetic interlayer having magnetism and the electrical resistance higher than the electrical resistance of the inner ferromagnetic layer is included in the inner ferromagnetic layer closest to the nonmagnetic layer in the ferromagnetic layer. When a current flows through the stack, the ferromagnetic interlayer reflects at least some electrons and limits a route for the electrons and thus a rate of resistance change is increased.

摘要翻译： 提供了能够增加电阻变化的磁换能器和薄膜磁头。 自旋阀膜具有堆叠结构，其包括顺序层叠在下层上的软磁性层，非磁性层，铁磁层，反铁磁层和保护层。 电阻根据铁磁层的磁化方向与软磁性层的磁化方向之间的相对角度而变化。 铁磁层包括内铁磁层，耦合层和外铁磁层。 内铁磁层和外铁磁层彼此磁耦合夹住耦合层，由此产生沿相反方向取向的磁化。 具有磁性的铁磁中间层和比内部铁磁层的电阻高的电阻包含在最接近铁磁层中的非磁性层的内部铁磁层中。 当电流流过堆叠时，铁磁层将反射至少一些电子并限制电子的路线，从而增加电阻变化率。

公开(公告)号：US06567247B1

公开(公告)日：2003-05-20

申请号：US09515327

申请日：2000-02-29

申请人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

发明人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano

IPC分类号： G11B5127

CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3932

摘要： An improved output magnetoresistance effect type head having a spin valve type multilayered film which includes a non-magnetic metal layer, a ferromagnetic layer, a soft magnetic layer, and a pinning layer, where the soft magnetic bias assist layers formed on the soft magnetic layer changes its magnetization direction in an external magnetic field. Bias applying layers formed on these layers for applying a bias in a longitudinal direction of the soft magnetic layer are made of antiferromagnetic RuxMyMnz, where M is Rh, Pt, Pd, Au, Ag, Re, Ir and Cr, 1≦x≦30, 1≦y≦30, 69≦z≦90 and 10≦x+y≦31 and the unit of x, y, z is atomic %.

摘要翻译： 一种具有自旋阀型多层膜的改进的输出磁阻效应型头，其包括非磁性金属层，铁磁层，软磁层和钉扎层，其中形成在软磁层上的软磁偏置辅助层 在外部磁场中改变其磁化方向。 形成在这些层上的偏压施加层用于在软磁性层的纵向施加偏压，由反铁磁RuxMyMnz制成，其中M是Rh，Pt，Pd，Au，Ag，Re，Ir和Cr，1 <= x < = 30，1 <= y <= 30，69 <= z <= 90，10 <= x + y <= 31，x，y，z的单位为原子％。

公开(公告)号：US06657828B2

公开(公告)日：2003-12-02

申请号：US09774644

申请日：2001-02-01

申请人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano ,  Takumi Uesugi

发明人： Satoru Araki ,  Yoshihiro Tsuchiya ,  Masashi Sano ,  Takumi Uesugi

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996

摘要： Provided are a magnetic transducer having a higher rate of resistance change and a larger magnitude of resistance change and having better stability of properties, and a thin film magnetic head. A stack of an MR element has a stacked structure comprising an underlayer, an antiferromagnetic layer, a ferromagnetic layer, a first nonmagnetic layer, a first soft magnetic layer, a second soft magnetic layer, a second nonmagnetic layer and a high-resistance layer, which are stacked in sequence on the underlayer. The orientation of magnetization of the ferromagnetic layer is fixed by exchange coupling between the ferromagnetic layer and the antiferromagnetic layer. The orientations of magnetizations of the first soft magnetic layer and the second soft magnetic layer change according to an external magnetic field. Electrical resistance of the stack changes according to a relative angle between the orientations of the magnetizations of the first soft magnetic layer and the second soft magnetic layer and the orientation of the magnetization of the ferromagnetic layer. The high-resistance layer has higher electrical resistance than electrical resistance of the second nonmagnetic layer. The second nonmagnetic layer and the high-resistance layer are provided on the side of the second soft magnetic layer opposite to the first nonmagnetic layer. Thus, the rate of resistance change and the magnitude of resistance change can be increased, and furthermore stability of properties can be improved.

摘要翻译： 提供具有较高电阻变化率和较大幅度的电阻变化并且具有更好的性能稳定性的磁换能器以及薄膜磁头。 MR元件的叠层具有包括底层，反铁磁层，铁磁层，第一非磁性层，第一软磁层，第二软磁层，第二非磁性层和高电阻层的层叠结构， 它们依次堆叠在底层上。 铁磁层的磁化方向通过铁磁层和反铁磁层之间的交换耦合来固定。 第一软磁层和第二软磁层的磁化取向根据外部磁场而变化。 堆的电阻根据第一软磁层和第二软磁层的磁化取向与铁磁层的磁化方向之间的相对角度而变化。 高电阻层的电阻比第二非磁性层的电阻高。 第二非磁性层和高电阻层设置在与第一非磁性层相对的第二软磁层的一侧。 因此，可以提高电阻变化率和电阻变化的大小，进而提高性能的稳定性。