A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr and SF6 which supplies a first plurality of fluorine ions, forming a first plasma from said first gas chemistry, passivating the etch surface of the aluminum neodymium-containing layer with the first plasma to cause a second plurality of fluorine ions to replace a first portion of the residual chlorine. This second plurality of fluorine ions is a subset of the first plurality of fluorine ions. The method further includes providing a second gas chemistry having hydrofluorocarbon and oxygen which provides a third plurality of fluorine ions and oxygen, forming a second plasma with the second gas chemistry, bombarding the etch surface of the aluminum neodymium-containing layer with the second plasma, causing a fourth plurality of fluorine ions to replace a second portion of the residual chlorine. This fourth plurality of fluorine ions is a subset of the third plurality of fluorine ions. The method additionally includes depositing a polymer material using a third plasma having hydrofluorocarbon to coat the etch surface of the aluminum neodymium-containing layer.