发明授权
- 专利标题： Nitride system semiconductor device and method for manufacturing the same
- 专利标题（中）： 氮化物系半导体器件及其制造方法
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申请号： US09247091申请日： 1999-02-09
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公开(公告)号： US06204084B1公开(公告)日： 2001-03-20
- 发明人: Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
- 申请人： Lisa Sugiura , Mariko Suzuki , Kazuhiko Itaya , Hidetoshi Fujimoto , Johji Nishio , John Rennie , Hideto Sugawara
- 优先权： JP8-236744 19960906; JP9-037990 19970221
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type InxGayAlzB1-x-y-zNmPnAs1-m-n (0≦x, 0≦y 0≦z, 0≦x+y+z≦1, 0
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