发明授权
- 专利标题: Back illuminated photodetector and method of fabricating the same
- 专利标题(中): 背光照明光电探测器及其制造方法
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申请号: US09092014申请日: 1998-06-04
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公开(公告)号: US06204506B1公开(公告)日: 2001-03-20
- 发明人: Hiroshi Akahori , Masaharu Muramatsu
- 申请人: Hiroshi Akahori , Masaharu Muramatsu
- 优先权: JP9-147992 19970605
- 主分类号: H01L2978
- IPC分类号: H01L2978
摘要:
An n-type buried channel, a silicon oxide film, a poly-Si transfer electrode, a PSG film as an insulating interlayer, an aluminum interconnection, and a silicon nitride film are stacked on one surface of a p-type silicon substrate to form a CCD. The other surface is protected by a silicon oxide film, and a p+-type accumulation layer is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate is anodically bonded on the CCD via an insulating polyimide film, and a conductive aluminum film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate.