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公开(公告)号：US09299860B2
公开(公告)日：2016-03-29
申请号：US13977976
申请日：2011-11-11
IPC分类号： H01L31/00 , H01L31/02 , H01L27/148
CPC分类号： H01L31/02 , H01L27/14806 , H01L27/14825 , H01L27/14831 , H01L27/14887
摘要： A solid state imaging device 1 is provided with a photoelectric conversion portion 2 having photosensitive regions 13, and a potential gradient forming portion 3 arranged opposite to the photosensitive regions 13. A planar shape of each photosensitive region 13 is a substantially rectangular shape composed of two long sides and two short sides. The photosensitive regions 13 are juxtaposed in a first direction intersecting with the long sides. The potential gradient forming portion 3 has a first potential gradient forming region to form a potential gradient becoming lower along a second direction from one of the short sides to the other of the short sides, and a second potential gradient forming region to form a potential gradient becoming higher along the second direction. The second potential gradient forming region is arranged next to the first potential gradient forming region in the second direction.
摘要翻译： 固态成像装置1设置有具有感光区域13的光电转换部分2和与感光区域13相对设置的电位梯度形成部分3.每个光敏区域13的平面形状是由两个 长边和两边。 感光区域13在与长边相交的第一方向上并列。 电位梯度形成部分3具有第一电位梯度形成区域，以形成沿着从短边中的一个短边到另一个的第二方向变低的电位梯度;以及第二电位梯度形成区域，以形成电位梯度 沿着第二个方向变得更高。 第二电位梯度形成区域沿着第二方向布置在第一电位梯度形成区域的旁边。
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公开(公告)号：US09000492B2
公开(公告)日：2015-04-07
申请号：US13258680
申请日：2010-03-24
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0352 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14625 , H01L27/14806 , H01L31/02363 , H01L31/035281
摘要： In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
摘要翻译： 在背照式固体摄像装置中，包括具有背面侧的光入射面的半导体基板4和配置在半导体基板4的相对侧的光检测面的电荷转移电极2相对于 光入射面，光检测面具有不平坦的表面。 通过具有不平坦表面的光检测表面，抑制由不平坦表面反射的光相对于入射光的相位具有散射的相位差并导致相互抵消的干涉光，因此抑制了金属化。 因此，可以通过背照式固态图像拾取装置获得高质量的图像。
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公开(公告)号：US08947587B2
公开(公告)日：2015-02-03
申请号：US12445630
申请日：2007-10-12
CPC分类号： H04N5/2253
摘要： A holding structure 100 for an image pickup device includes a back-incident type image pickup device 1 and a holding member 51 that holds the image pickup element 1, and the image pickup device 1 has an image pickup element 11 that performs imaging and a wiring board 12 electrically connected to the image pickup element 11. The holding member 51 is freely attachably and detachably attached to a side face 27 of the wiring board 12, at each of the opposing side faces 27a, 27a in the wiring board 12, a to-be-fitted portion 28 is formed, and the to-be-fitted portion 28 and a fitting portion 54 formed at the holding member 51 are fitted together. This relieves, even when an impact is applied to the image pickup device 1 during an inspection, delivery, etc., the impact to be applied to the wiring board 12 and the image pickup element 11 by the holding member 51 while suppressing the holding member 51 from coming off. Further, handling of the image pickup device 1 is facilitated, and an unnecessary impact to be applied to the image pickup device 1 is suppressed.
摘要翻译： 用于图像拾取装置的保持结构100包括后入射型图像拾取装置1和保持图像拾取元件1的保持构件51，并且图像拾取装置1具有执行成像和布线的图像拾取元件11 基板12电连接到图像拾取元件11.保持构件51在布线板12的每个相对侧面27a，27a处可自由地安装和拆卸地附接到布线板12的侧面，a至 被嵌合部28和形成在保持构件51上的嵌合部54嵌合在一起。 即使当在检查，传送等期间对图像拾取装置1施加冲击时，也可以通过保持构件51对保持构件51施加的对冲击的影响，同时抑制保持构件 来自51 此外，便于图像拾取装置1的处理，并且抑制对图像拾取装置1施加不必要的影响。
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4.发明授权Solid state image device having a pair of overflow drains extends along the electron transfer direction at a boundary between channel region and channel stop isolation regions of the multiplication register 有权具有一对溢流漏极的固态图像装置在乘法寄存器的沟道区域和沟道停止隔离区域之间的边界处沿着电子传输方向延伸公开(公告)号：US08466498B2
公开(公告)日：2013-06-18
申请号：US12920119
申请日：2010-01-27
IPC分类号： H01L27/148 , H01L29/765
CPC分类号： H01L27/14887 , H01L27/14609 , H01L27/1464 , H01L27/14812 , H01L27/1485 , H01L29/76816
摘要： In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).
摘要翻译： 在具有电子倍增功能的固态成像装置中，在与乘法寄存器EM的电子转移方向垂直的截面中，绝缘层2在两侧部比在中央区域更厚。 在N型半导体区域1C的中心区域和两侧部分之间的边界处形成一对溢流漏极1N。 每个溢流漏极1N沿乘法寄存器EM的电子传输方向延伸。 溢流栅电极G从绝缘层2的薄部延伸到厚部。溢流栅电极G沿纵向方向设置在每个转移电极8的两端之间，绝缘层2也起到屏蔽作用 每个电极8（8A和8B）的电极。
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5.发明授权公开(公告)号：US08345135B2
公开(公告)日：2013-01-01
申请号：US12920131
申请日：2010-01-27
IPC分类号： H04N3/14
CPC分类号： H01L27/14609 , H01L27/14812 , H01L27/14818
摘要： A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode 11A provided at an end portion of a starting side of the imaging region VR in an electron transfer direction. A specific vertical shift register (channel CH1) into which the electrons are injected by the electron injecting electrode 11A is disposed in a thick part of a semiconductor substrate, and is set in such a way as to be blocked from incident light.
摘要翻译： 具有电子倍增功能的固态成像装置包括由多个垂直移位寄存器形成的成像区域VR，从成像区域VR传送电子的水平移位寄存器HR，将来自水平移位的电子相乘的倍增寄存器EM 寄存器HR以及设置在成像区域VR的起始侧的端部的电子传输方向的电子注入电极11A。 电子注入电极11A注入的特定的垂直移位寄存器（通道CH1）设置在半导体衬底的厚部分中，并且被设置成阻挡入射光。
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公开(公告)号：US08110802B2
公开(公告)日：2012-02-07
申请号：US12445017
申请日：2007-10-09
CPC分类号： H01L31/024 , H01L25/042 , H01L27/14618 , H01L31/0203 , H01L2224/48091 , H01L2924/01004 , H04N5/2253 , H05K1/147 , H05K3/0067 , H05K2201/09918 , H01L2924/00014
摘要： In a photodetecting device 3, positional alignment marks 18A, 18B to serve as positional references of a photodetecting element 11 are formed at the front surface side of the photodetecting element 11. Moreover, a pin base 13 is provided with a threaded fitting pin 32 to be fitted with a cold plate 2, and the threaded fitting pin 32 is accurately positionally aligned with respect to the photodetecting element 11 via a positioning portion 33 positioned with respect to the positional alignment marks 18A, 18B exposed from a slit portion 23 and a cutaway portion 24 of a wiring board 12. Accordingly, in the photodetecting device 3, by only fitting the threaded fitting pin 32 with a recess portion 4 of the cold plate 2, the photodetecting element 11 is accurately positionally aligned with respect to the cold plate 2.
摘要翻译： 在光检测装置3中，在受光元件11的前表面侧形成用作受光元件11的位置基准的位置对准标记18A，18B。此外，销基座13设置有螺纹嵌合销32 安装有冷板2，并且螺纹嵌合销32相对于从狭缝部23露出的位置对准标记18A，18B定位的定位部33相对于光检测元件11精确地定位，并且切口 因此，在光检测装置3中，通过将螺纹嵌合销32与冷板2的凹部4嵌合，光检测元件11相对于冷板2精确地定位 。
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公开(公告)号：US08094221B2
公开(公告)日：2012-01-10
申请号：US12445011
申请日：2007-10-09
IPC分类号： H04N5/335
CPC分类号： H04N5/2257 , G03B17/02 , H01L27/14618 , H01L27/14625 , H01L27/14636 , H01L27/148 , H01L31/02325 , H01L2224/48091 , H01L2224/48227 , H01L2224/49109 , H04N1/024 , H04N5/2251 , H04N2201/02456 , H04N2201/02458 , H04N2201/02466 , H04N2201/02485 , H01L2924/00014
摘要： A solid-state image pickup device comprising: a multilayer wiring board 2 having an opening portion 21; a spacer 3 covered with a conductive film 32, and fixed to the multilayer wiring board 2 in a state of making the conductive film 32 face contact with a reference potential electrode exposed into the opening portion 21 of the multilayer wiring board 2; a solid-state image pickup element 4 fixed to the spacer 3 in a state of face contact with the conductive film 32 of the spacer 3, and arranged in the opening portion 21; and an optical element 5 fixed at a position opposing the solid-state image pickup element 4 via the spacer 3, and transmitting light into the opening portion.
摘要翻译： 一种固态图像拾取装置，包括：具有开口部分21的多层布线板2; 覆盖有导电膜32的间隔件3，并且在使导电膜32与暴露于多层布线基板2的开口部21的基准电位电极面接触的状态下固定于多层布线基板2; 固体摄像元件4，其与间隔件3的导电膜32面接触的状态固定在间隔物3上，配置于开口部21; 以及通过间隔件3固定在与固态摄像元件4相对的位置处的光学元件5，并将光透射到开口部。
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公开(公告)号：US20110272557A1
公开(公告)日：2011-11-10
申请号：US13144727
申请日：2010-01-22
IPC分类号： H01J43/04
CPC分类号： H01L27/14609 , H01L27/14812
摘要： A solid-state imaging device 1 according to one embodiment of the present invention is a charge multiplying solid-state imaging device, and includes an imaging area 10 that generates a charge according to the amount of incident light, a plurality of output register units 21 to 24 that receive the charge from the imaging area 10, and a plurality of multiplication register units 31 to 34 that multiply charges from the output registers 21 to 24, respectively, and the multiplication register units 31 to 34 are different in the number of multiplication stages from each other.
摘要翻译： 根据本发明的一个实施例的固态成像装置1是电荷倍增固态成像装置，并且包括根据入射光量产生电荷的成像区域10，多个输出寄存器单元21 到24，其从成像区域10接收电荷，以及多个乘法寄存器单元31至34，其分别从输出寄存器21至24乘以电荷，并且乘法寄存器单元31至34的乘法数量不同 彼此相处。
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公开(公告)号：US07696595B2
公开(公告)日：2010-04-13
申请号：US10573467
申请日：2004-09-24
IPC分类号： H01L31/058
CPC分类号： H01L21/563 , H01L24/29 , H01L24/81 , H01L24/90 , H01L27/14636 , H01L27/1464 , H01L27/14806 , H01L2224/73203 , H01L2224/81203 , H01L2224/81801 , H01L2224/83191 , H01L2224/83194 , H01L2924/01004 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01058 , H01L2924/01082 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3512 , H01L2924/00
摘要： With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30. This resin 32 is a resin sheet that has been formed in advance so as to surround a periphery of a gap between thinned portion 14 and wiring substrate 20 except for portions of the periphery.
摘要翻译： 通过该半导体装置，能够防止半导体基板的薄壁化部分的变形和破裂，从而能够实现相对于光检测单元的高精度聚焦，并且保持光检测单元的高灵敏度的均匀性和稳定性。 半导体器件1具有半导体衬底10，布线衬底20，导电凸块30和树脂32.半导体衬底10上形成CCD 12和薄化部分14.半导体衬底10的电极16通过导电凸块 绝缘树脂32填充薄部14的外缘15与布线基板20之间的间隙，以增强导电凸块30的接合强度。该树脂32是预先形成的树脂片 以便围绕除了周边部分之间的间隔部分14和布线基板20之间的间隙的周边。
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公开(公告)号：US07556975B2
公开(公告)日：2009-07-07
申请号：US10553231
申请日：2004-04-14
IPC分类号： H01L21/02
CPC分类号： H01L27/14618 , H01L27/1464 , H01L27/14683 , H01L27/14812 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A CCD portion 3 is formed on a front surface side of a semiconductor substrate 1. A region of a back surface side of semiconductor substrate 1 that corresponds to CCD portion 3 is thinned while leaving peripheral regions 1a of the region, and an accumulation layer 5 is formed on the back surface side of semiconductor substrate 1. An electrical wiring 7, which is electrically connected to CCD portion 3, and an electrode pad 9, which is electrically connected to electrical wiring 7, are then formed on a region 1b of the front surface side of semiconductor substrate 1 that corresponds to a peripheral region 1a, and a supporting substrate 11 is adhered onto the front surface side of semiconductor substrate 1 so as to cover CCD portion 3 while leaving electrode pad 9 exposed. Semiconductor substrate 1 and supporting substrate 11 are then cut at a thinned portion of semiconductor substrate 1 so as to leave peripheral region 1a corresponding to region 1b at which electrical wiring 7 and electrode pad 9 are formed.
摘要翻译： CCD部3形成在半导体基板1的表面侧。半导体基板1的与CCD部3对应的背面侧的区域变薄，同时留下该区域的周边区域1a，并且累积层5 形成在半导体基板1的背面侧上。与CCD部分3电连接的电线7和电连接到电线7的电极焊盘9然后形成在 对应于周边区域1a的半导体基板1的前表面侧，并且将支撑基板11粘附到半导体基板1的前表面侧，以便覆盖CCD部分3，同时使电极焊盘9暴露。 然后在半导体衬底1的薄化部分切割半导体衬底1和支撑衬底11，以便留下对应于形成电线7和电极焊盘9的区域1b的周边区域1a。
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