发明授权
- 专利标题： Capacitor including barium strontium titanate film
- 专利标题（中）： 电容器包括钛酸钡锶薄膜
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申请号： US09592862申请日： 2000-06-13
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公开(公告)号： US06212059B1公开(公告)日： 2001-04-03
- 发明人: Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
- 申请人： Fusaoki Uchikawa , Shigeru Matsuno , Shinichi Kinouchi , Hisao Watarai
- 优先权： JP4-252836 19920922; JP5-184904 19930727
- 主分类号： H01G410
- IPC分类号： H01G410
摘要：
A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.
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