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16 条记录 (耗时 0.023 秒)

    Capacitor
    4.
    发明授权
    Capacitor 有权
    电容器

    公开(公告)号：US06236559B1

    公开(公告)日：2001-05-22

    申请号：US09461732

    申请日：1999-12-16

    申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

    发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

    IPC分类号： H01G410

    CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

    摘要： A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

    摘要翻译： 包括通过化学气相沉积沉积的金属氧化物电介质膜的电容器包括将至少一种有机金属CVD前体化合物溶解在包括四氢呋喃的溶剂体系中以形成液体溶液; 蒸发包含至少一种有机金属化合物的液体溶液; 以及通过将至少一部分来自所述汽化溶液的所述至少一种有机金属化合物沉积在基底上而形成所述金属氧化物电介质薄膜。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20130153900A1

    公开(公告)日：2013-06-20

    申请号：US13818993

    申请日：2011-08-26

    申请人： Shinichi Kinouchi ,  Hiroshi Nakatake ,  Yuji Ebiike ,  Akihiko Furukawa ,  Masayuki Imaizumi

    发明人： Shinichi Kinouchi ,  Hiroshi Nakatake ,  Yuji Ebiike ,  Akihiko Furukawa ,  Masayuki Imaizumi

    IPC分类号： H01L23/34

    CPC分类号： H01L23/34 ,  G01K7/01 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7803 ,  H01L29/7815 ,  H01L29/7828 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device capable of rapidly and accurately sensing the information regarding the temperature of a semiconductor transistor contained therein. A MOSFET includes a plurality of cells, and includes a main cell group including a cell for supplying a current to a load among the plurality of cells, and a sense cell group including a cell for sensing temperature information regarding the temperature of the MOSFET thereamong. The main cell group and the sense cell group have different temperature characteristics showing changes in electrical characteristics to changes in temperature. A temperature sensing circuit senses the temperature of the MOSFET based on, for example, a value of a main current flowing through the main cell group and a value of a sense current flowing through the sense cell group.

    摘要翻译： 一种半导体器件，其能够快速且准确地感测关于其中包含的半导体晶体管的温度的信息。 MOSFET包括多个单元，并且包括主单元组，其包括用于向多个单元之间的负载提供电流的单元，以及包括用于感测关于MOSFET的温度的温度信息的单元的感测单元组。 主电池组和感应电池组具有不同的温度特性，显示电特性随温度变化的变化。 温度检测电路基于例如流过主单元组的主电流的值和流过感测单元组的感测电流的值来感测MOSFET的温度。

    Power semiconductor module, power converting apparatus, and railway car
    7.
    发明授权
    Power semiconductor module, power converting apparatus, and railway car 有权
    功率半导体模块，电力转换装置和铁路车辆

    公开(公告)号：US09270193B2

    公开(公告)日：2016-02-23

    申请号：US13582834

    申请日：2010-10-29

    申请人： Takeshi Tanaka ,  Shinichi Kinouchi

    发明人： Takeshi Tanaka ,  Shinichi Kinouchi

    IPC分类号： H02P6/14 ,  H01L29/267 ,  H02M5/45 ,  H02M5/458 ,  B60L9/22 ,  H03K17/12

    CPC分类号： H02M5/4585 ,  B60L9/22 ,  B60L2200/26 ,  H03K17/127

    摘要： A power semiconductor module includes an element pair formed by connecting, in anti-parallel to each other, an IGBT and an FWD group in which an FWD, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series and an element pair formed by connecting, in anti-parallel to each other, an IGBT and an FWD group in which a FWD, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FWD, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series. The element pairs are connected in parallel.

    摘要翻译： 功率半导体模块包括通过以彼此反并联的方式连接IGBT和FWD组形成的元件对，其中FWD（其导通期间的电压降特性具有负温度系数）以及FED， 在导通期间具有正温度系数的电压降特性串联连接，并且通过将IGBT和FWD组反向并联连接形成的元件对，其中FWD，其电压降特性 在导通时具有负温度系数，并且在导通期间具有正温度系数的电压降特性的FWD串联连接。 元件对并联连接。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08785931B2

    公开(公告)日：2014-07-22

    申请号：US13818993

    申请日：2011-08-26

    申请人： Shinichi Kinouchi ,  Hiroshi Nakatake ,  Yuji Ebiike ,  Akihiko Furukawa ,  Masayuki Imaizumi

    发明人： Shinichi Kinouchi ,  Hiroshi Nakatake ,  Yuji Ebiike ,  Akihiko Furukawa ,  Masayuki Imaizumi

    IPC分类号： H01L23/58 ,  H01L29/78

    CPC分类号： H01L23/34 ,  G01K7/01 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7803 ,  H01L29/7815 ,  H01L29/7828 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device capable of rapidly and accurately sensing the information regarding the temperature of a semiconductor transistor contained therein. A MOSFET includes a plurality of cells, and includes a main cell group including a cell for supplying a current to a load among the plurality of cells, and a sense cell group including a cell for sensing temperature information regarding the temperature of the MOSFET thereamong. The main cell group and the sense cell group have different temperature characteristics showing changes in electrical characteristics to changes in temperature. A temperature sensing circuit senses the temperature of the MOSFET based on, for example, a value of a main current flowing through the main cell group and a value of a sense current flowing through the sense cell group.

    摘要翻译： 一种半导体器件，其能够快速且准确地感测关于其中包含的半导体晶体管的温度的信息。 MOSFET包括多个单元，并且包括主单元组，其包括用于向多个单元之间的负载提供电流的单元，以及包括用于感测关于MOSFET的温度的温度信息的单元的感测单元组。 主电池组和感应电池组具有不同的温度特性，显示电特性随温度变化的变化。 温度检测电路基于例如流过主单元组的主电流的值和流过感测单元组的感测电流的值来感测MOSFET的温度。

    Drive circuit for semiconductor element
    9.
    发明授权
    Drive circuit for semiconductor element 有权
    半导体元件驱动电路

    公开(公告)号：US07948277B2

    公开(公告)日：2011-05-24

    申请号：US12294437

    申请日：2007-04-04

    申请人： Hiroshi Nakatake ,  Satoshi Ishibashi ,  Shinsuke Idenoue ,  Takeshi Oi ,  Shinichi Kinouchi ,  Takeshi Horiguchi

    发明人： Hiroshi Nakatake ,  Satoshi Ishibashi ,  Shinsuke Idenoue ,  Takeshi Oi ,  Shinichi Kinouchi ,  Takeshi Horiguchi

    IPC分类号： H03K3/00

    CPC分类号： H03K17/18 ,  H03K17/08128 ,  H03K17/168

    摘要： A drive circuit wherein any abnormality of a semiconductor element is prevented from being erroneously sensed in a case where a gate “ON” command has entered in a state in which a gate voltage of the semiconductor element has not lowered fully. A detection process for a controlled variable of the semiconductor element is permitted only within a period which corresponds to a controlled variable of the semiconductor element at the time when an “ON” signal has been inputted to a control circuit, and a detected controlled variable which is detected within the period and a comparison controlled variable which is set in correspondence with the controlled variable are compared so as to output an abnormality signal, whereby the semiconductor element is turn-off at a speed lower than in normal turn-off.

    摘要翻译： 在半导体元件的栅极电压未完全降低的状态下，在栅极“ON”指令进入的情况下，防止半导体元件的任何异常被错误地检测到的驱动电路。 只有在“ON”信号被输入到控制电路时的半导体元件的受控变量对应的期间内才允许半导体元件的受控变量的检测处理，以及检测到的控制变量， 在与该控制变量对应的情况下设定的比较控制变量进行比较，从而输出异常信号，由此半导体元件以比正常关断低的速度关断。