发明授权
- 专利标题： Method of manufacturing crystal of silicon using an electric potential
- 专利标题（中）： 使用电位制造硅晶体的方法
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申请号： US09362103申请日： 1999-07-28
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公开(公告)号： US06228165B1公开(公告)日： 2001-05-08
- 发明人: Masahiko Baba , Scott Matthew Kirkland , Richard William Rudberg , Susumu Sonokawa , Darren Mark Taie , Akira Uchikawa
- 申请人： Masahiko Baba , Scott Matthew Kirkland , Richard William Rudberg , Susumu Sonokawa , Darren Mark Taie , Akira Uchikawa
- 主分类号： C30B1516
- IPC分类号： C30B1516
摘要：
A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.