公开(公告)号：US06285011B1

公开(公告)日：2001-09-04

申请号：US09416432

申请日：1999-10-12

申请人： Carl F. Cherko

发明人： Carl F. Cherko

IPC分类号： C30B1516

CPC分类号： C30B15/14 ,  Y10T117/1068

摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline ingots according to the Czochralski method comprises a heating element sized and shaped for placement in the housing of the crystal puller for radiating heat within the housing. The heating element has heating segments arranged in a generally side-by-side relationship and electrically connected together. Each heating segment comprises a web and a flange projecting outwardly from the web in non-coplanar relationship therewith. This reduces the cross-sectional area of the heating segment for increasing the electrical resistance and power output of the heater while providing desired structural rigidity.

摘要翻译： 用于根据切克劳斯基法生长单晶锭的晶体拉拔器中使用的电阻加热器包括加热元件，其尺寸和形状适于放置在用于在壳体内辐射热量的晶体拉出器的壳体中。 加热元件具有以大体上并排的关系布置的电热段并电连接在一起。 每个加热段包括幅材和从该幅材向外以非共面关系向外突出的凸缘。 这降低了加热段的横截面面积，以增加加热器的电阻和功率输出，同时提供期望的结构刚度。

公开(公告)号：US06228165B1

公开(公告)日：2001-05-08

申请号：US09362103

申请日：1999-07-28

申请人： Masahiko Baba ,  Scott Matthew Kirkland ,  Richard William Rudberg ,  Susumu Sonokawa ,  Darren Mark Taie ,  Akira Uchikawa

发明人： Masahiko Baba ,  Scott Matthew Kirkland ,  Richard William Rudberg ,  Susumu Sonokawa ,  Darren Mark Taie ,  Akira Uchikawa

IPC分类号： C30B1516

CPC分类号： C30B29/06 ,  C30B15/10

摘要： A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.

摘要翻译： 根据切克劳斯基法（Czochralski method）制造硅晶体的方法包括以下步骤：跨越含有硅熔体的石英坩埚施加电位，并从硅熔体中拉出硅晶体。