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1.
公开(公告)号:US06228165B1
公开(公告)日:2001-05-08
申请号:US09362103
申请日:1999-07-28
申请人: Masahiko Baba , Scott Matthew Kirkland , Richard William Rudberg , Susumu Sonokawa , Darren Mark Taie , Akira Uchikawa
发明人: Masahiko Baba , Scott Matthew Kirkland , Richard William Rudberg , Susumu Sonokawa , Darren Mark Taie , Akira Uchikawa
IPC分类号: C30B1516
摘要: A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.
摘要翻译: 根据切克劳斯基法(Czochralski method)制造硅晶体的方法包括以下步骤:跨越含有硅熔体的石英坩埚施加电位,并从硅熔体中拉出硅晶体。