Invention Grant
- Patent Title: Nonvolatile memory
- Patent Title (中): 非易失性存储器
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Application No.: US09272313Application Date: 1999-03-19
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Publication No.: US06229175B1Publication Date: 2001-05-08
- Inventor: Hidetsugu Uchida
- Applicant: Hidetsugu Uchida
- Priority: JP10-074715 19980323
- Main IPC: H01L29788
- IPC: H01L29788
Abstract:
A nonvolatile memory includes a charge transfer layer, having a low barrier height, between the floating gate electrode and the control gate electrode. Accordingly, the nonvolatile memory avoids the problem in which the number of program and erasure cycles is decreased as a result of degradation of a tunnel oxide film.
Information query
