A process for cleaning a final polished semiconductor wafer in a single operation (i.e., following final polishing, a process or action is directed at the wafer which includes drying the wafer only once, thereby yielding a polished wafer surface substantially free of contaminants). The process comprising contacting the polished wafer with an aqueous solution comprising an oxidizing agent to oxidize organic carbon on the surface of the polished wafer. After oxidizing the organic carbon, immersing the polished wafer in an megasonically agitated alkaline cleaning solution to reduce the surface concentration of contaminant particles exceeding 0.2 &mgr;m in diameter. Withdrawing the polished wafer from the alkaline cleaning solution and rinsing it with deionized water. After rinsing, immersing the polished wafer in an acidic cleaning solution to reduce the surface concentration of contaminant metal atoms. Withdrawing the polished wafer from the acidic cleaning solution and immersing it in an ozonated aqueous bath. Withdrawing the polished wafer from the aqueous bath and drying the wafer. The process is further characterized by the absence of a step in which the surface of the polished wafer is dried between oxidizing organic carbon on the surface and immersing the wafer in the ozonated aqueous bath.