Process for pickling stainless steel in the absence of nitric acid and in the presence of chloride ions
    4.
    发明授权
    Process for pickling stainless steel in the absence of nitric acid and in the presence of chloride ions 有权
    在不存在硝酸和氯离子存在下酸洗不锈钢的方法

    公开(公告)号:US06554908B1

    公开(公告)日:2003-04-29

    申请号:US09560982

    申请日:2000-04-28

    IPC分类号: C23G102

    摘要: Process for pickling stainless steel carried out at a temperature of between 20° and 70° C., with the use of a pickling solution containing the following basic ingredients: H2SO4 (free acid): 50 to 200 g/l HF (free acid): 0 to 60 g/l F− anion (total): 5 to 150 g/l SO42− anion (total): 50 to 350 g/l Total free acidity (H2SO4+HF): between 1 and 7 g. equiv./l where by “free acid” is meant the acid that does not constitute the anion bound in the form of salts or complexes with the metal cations present in the solution; and, in addition: Fe3+ in a quantity of at least 15 g/l chloride anion in a quantity of between 0.1 and 10 g/l, into which solution is fed, during the pickling process, an oxidant that is able to oxidize Fe2+ to Fe3+ in order to maintain the redox potential of the solution at a value of between +230 and +800 mV.

    摘要翻译: 使用含有以下基本成分的酸洗溶液,在20〜70℃的温度下进行酸洗不锈钢的处理:H 2 SO 4(游离酸):50〜200g / 1HF(游离酸): 0至60g / lF-阴离子(总计):5至150g / lSO42-阴离子(总计):50至350g / l总游离酸度(H 2 SO 4 + HF):1至7g。 等于/ l,其中“游离酸”是指不构成阴离子形式的酸与存在于溶液中的金属阳离子形成的盐或配合物的酸; 另外,在酸洗过程中,向其中加入溶液的至少15g / l氯化物阴离子的量的Fe 3+,可以将氧化剂Fe2 +氧化成Fe3 + 以便将溶液的氧化还原电位保持在+ 230和+ 800mV之间的值。

    Chemical removal of a chromium oxide coating from an article
    5.
    发明授权
    Chemical removal of a chromium oxide coating from an article 有权
    从制品中化学去除氧化铬涂层

    公开(公告)号:US06454870B1

    公开(公告)日:2002-09-24

    申请号:US09994343

    申请日:2001-11-26

    IPC分类号: C23G102

    摘要: A chromium oxide coating is removed from a surface of an article by cleaning the article in an alkaline degreasing/rust removal solution at a degreasing/rust removal temperature of from about 180° F. to about 200° F., scale conditioning the article in an alkaline permanganate conditioning solution at a scale-conditioning temperature of from about 160° F. to about 200° F., and contacting the article to an acidic stripping solution comprising hydrochloric acid and an etching inhibitor at a stripping temperature of from about 130° F. to about 140° F.

    摘要翻译: 通过在约180°F至约200°F的脱脂/除锈温度下在碱性脱脂/除锈溶液中清洁该制品,从制品的表面除去氧化铬涂层。 在约160°F至约200°F的调温温度下的碱性高锰酸盐调理溶液,并且在约130℃的剥离温度下使制品与包含盐酸和蚀刻抑制剂的酸性剥离溶液接触 F.至约140°F

    Lanthanide oxide dissolution from glass surface
    7.
    发明授权
    Lanthanide oxide dissolution from glass surface 有权
    镧系元素氧化物从玻璃表面溶出

    公开(公告)号:US06402851B1

    公开(公告)日:2002-06-11

    申请号:US09590667

    申请日:2000-06-08

    IPC分类号: C23G102

    摘要: A method and product for computer disk drives. Glass substrates are provided having low content of residual polishing particles on the surfaces thereof. An exemplary method includes reduction of residual polishing particle content by immersion of the glass substrate in an acid bath containing nitric acid, hydrogen peroxide and an organic acid having a carboxylic acid group.

    摘要翻译: 计算机磁盘驱动器的方法和产品。 在其表面上提供具有低残留抛光颗粒含量的玻璃基板。 一种示例性方法包括通过将玻璃基材浸入含有硝酸,过氧化氢和具有羧酸基团的有机酸的酸浴中来减少残留的抛光颗粒含量。

    Method for processing semiconductor substrate
    8.
    发明授权
    Method for processing semiconductor substrate 失效
    半导体衬底的处理方法

    公开(公告)号:US06319331B1

    公开(公告)日:2001-11-20

    申请号:US09200603

    申请日:1998-11-30

    IPC分类号: C23G102

    摘要: An object is to provide a method for processing a semiconductor substrate that can form an oxide film less prone to take in impurities affecting semiconductor characteristics on the surface. An RCA-cleaned semiconductor substrate is treated with diluted hydrofluoric acid (HF) to remove a native oxide film formed on the semiconductor substrate during the RCA cleaning process (step S8). For conditions of the treatment with diluted hydrofluoric acid, the concentration of hydrofluoric acid is about 50%, the ratio of hydrofluoric acid to pure water is 1:100, and the processing time is about one minute. Finally, the semiconductor substrate from which the native oxide film has been removed is stored in a clean atmosphere of oxygen for a predetermined time period to form an oxide film on the semiconductor substrate surface (step S9). The percentage of oxygen in the atmosphere of oxygen in the place for storage is about 20 to 100%.

    摘要翻译: 本发明的目的是提供一种可以形成氧化物膜的半导体衬底的处理方法,所述氧化膜不容易受到影响表面半导体特性的杂质。 用稀释的氢氟酸(HF)处理RCA清洗的半导体衬底,以在RCA清洁过程中去除在半导体衬底上形成的自然氧化膜(步骤S8)。 对于用稀氢氟酸处理的条件,氢氟酸的浓度为约50%,氢氟酸与纯水的比例为1:100,处理时间约为1分钟。 最后将自然氧化膜除去的半导体衬底在氧气的清洁气氛中保存预定时间以在半导体衬底表面上形成氧化膜(步骤S9)。 氧气在储存空间中的氧气的百分比约为20至100%。

    Selective deleading process and bath for plumbing components made of a copper alloy
    9.
    发明授权
    Selective deleading process and bath for plumbing components made of a copper alloy 有权
    选择性除铅工艺和由铜合金制成的管道部件的浴缸

    公开(公告)号:US06284053B1

    公开(公告)日:2001-09-04

    申请号:US09603976

    申请日:2000-06-27

    IPC分类号: C23G102

    CPC分类号: E03B7/006 C23F1/00

    摘要: A process for selectively deleading a plumbing component made of a lead-containing copper alloy. The process comprises traditional pickling the component, washing the component, dipping the component in a deleading bath comprising at least one carboxylic acid selected from the group consisting of formic acid, acrylic acid, propionic acid and butyric acid and traditionally finishing the component.

    摘要翻译: 一种用于对由含铅铜合金制成的管道部件进行选择性脱铅的方法。 该方法包括传统的酸洗组分,洗涤组分,将组分浸入包含至少一种选自甲酸,丙烯酸,丙酸和丁酸的羧酸的去污浴中,并且传统地整理组分。

    Chemical delacquering process
    10.
    发明授权
    Chemical delacquering process 失效
    化学脱胶工艺

    公开(公告)号:US06231678B1

    公开(公告)日:2001-05-15

    申请号:US09692534

    申请日:2000-10-19

    IPC分类号: C23G102

    摘要: A chemical delacquering composition, process and system for delacquering substrates such as aluminum scrap in which an aqueous solution containing at least one short-chain organic acid, preferably a mixture of two short-chain organic acids, and optional components such as surfactants, are contacted onto the substrate(s) with application of heat and agitation. The invention embraces the use of one or more organic acids (carboxylic acids) having a total of 2-12 carbons, preferably 3-8 carbons. Concentration of organic acid by weight ranges from about 0.5-8% per at least one organic acid, or preferably 2-4% for each organic acid component assuming two organic acid components are present. In the preferred embodiment of the invention, about 2-4% each of citric and lactic acids are present in the delacquering composition. Processing temperatures range from 160-212° F., preferably 180-212° F., and most preferably 185-212° F.(higher temperatures may be used in pressurized reactors, although pressurized reactors are not generally necessary).

    摘要翻译: 用于脱模底物例如铝废料的化学脱胶组合物,方法和系统,其中将含有至少一种短链有机酸的水溶液,优选两种短链有机酸的混合物和任选组分如表面活性剂接触 在加热和搅拌下加入到基材上。 本发明包括使用总共2-12个碳,优选3-8个碳的一种或多种有机酸(羧酸)。 假定存在两种有机酸成分,有机酸的重量浓度范围为每个至少一种有机酸约0.5-8%,或优选2-4%。 在本发明的优选实施方案中,柠檬酸和乳酸中约2-4%存在于脱胶组合物中。 加工温度范围为160-212°F,优选为180-212°F,最优选为185-212°F(更高的温度可用于加压反应器,尽管通常不需要加压反应器)。